Valence band offset of wurtzite inN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Li, Zhiwei ^a   Zhang, Biao ^a   Wang, Jun ^a   Liu, Jianming ^a   Liu, Xianglin ^a   Yang, Shaoyan ^a   Zhu, Qinsheng ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; HETEROJUNCTIONS; III-V SEMICONDUCTORS; PHOTOELECTRONS; PHOTONS; STRONTIUM TITANATES; TITANIUM COMPOUNDS; VALENCE BANDS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC SULFIDE;

CONDUCTION BAND OFFSET; FUNCTIONAL OXIDES; INDIUM NITRIDE; TYPE I BAND ALIGNMENTS; VALENCE BAND OFFSETS; WURTZITE INNS; WURTZITES; BAND ALIGNMENTS; SRTIO;

INDIUM COMPOUNDS; HETEROJUNCTIONS;

EID: 84255172601     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-193     Document Type: Article

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