Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy

Applied Physics Letters

Volumn 86, Issue 13, 2005, Pages 1-3

  Dimakis, E ^a,b   Iliopoulos, E ^a,b   Tsagaraki, K ^a,b   Georgakilas, A ^a,b  

^a UNIVERSITY OF CRETE   (Greece)

^b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

DECOMPOSITION; GALLIUM; GALLIUM NITRIDE; INDIUM; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; STOICHIOMETRY;

ATOMIC RATIO; INDIUM ADATOMS; RADIO FREQUENCY (RF); TWO-DIMENSIONAL GROWTH;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 17644421384     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1891292     Document Type: Article

References (12)

1. V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, Phys. Status Solidi B 229, R1 (2002).
2. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
3. Y. Nanishi, Y. Saito, and T. Yamaguchi, Jpn. J. Appl. Phys., Part 1 42, 2549 (2003).
4. V. Cimalla, J. Pezoldt, G. Ecke, R. Kosiba, O. Ambacher, L. Spiess, G. Teichert, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 83, 3468 (2003).
5. T. Ive, O. Brandt, M. Ramsteiner, M. Giehler, H. Kostial, and K. H. Ploog, Appl. Phys. Lett. 84, 1671 (2003).
6. B. Maleyre, O. Briot, and S. Ruffenach, J. Cryst. Growth 269, 15 (2004).
7. Y. G. Cao, M. H. Xie, Y. Liu, Y. F. Ng, H. S. Wu, and S. Y. Tong, Appl. Phys. Lett. 83, 5157 (2003).
8. E. Dimakis, G. Konstantinidis, K. Tsagaraki, A. Adikimenakis, E. Iliopoulos, and A. Georgakilas, Superlatt. Microstruct. 36, 497 (2004).
9. E. Dimakis, K. Tsagaraki, E. Iliopoulos, Ph. Komninou, Th. Kehagias, A. Delimitis, and A. Georgakilas, J. Cryst. Growth (unpublished).
10. S. V. Ivanov, T. V. Shubina, V. N. Jmerik, V. A. Vekshin, P. S. Kop'ev, and B. Monemar, J. Cryst. Growth 269, 1 (2004).
11. G. Mula, C. Adelman, S. Moehl, J. Qullier, and B. Daudin, Phys. Rev. B 64, 195406 (2001).
12. J. Neugebauer, in Nitride Semiconductors, Handbook on Materials and Devices, edited by P. Ruterana, M. Albrecht, and J. Neugebauer (Wiley-VCH, Weinheim, 2003), Chap., p. 295.