Optical bandgap and near surface band bending in degenerate InN films grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 114, Issue 15, 2013, Pages

  Tangi, Malleswararao ^a   Kuyyalil, Jithesh ^a   Shivaprasad, S M ^a  

^a JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; HALL CARRIER CONCENTRATIONS; OPTICAL ABSORPTION MEASUREMENT; POLYCRYSTALLINE FILM; SINGLE-CRYSTALLINE FILM; SURFACE CHARGE ACCUMULATIONS; TEMPERATURE RANGE; VALENCE-BAND MAXIMUMS;

CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; PHOTOELECTRONS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE CHARGE;

EID: 84886531115     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4824823     Document Type: Article

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