Photogated transistor of III-nitride nanorods

Applied Physics Letters

Volumn 96, Issue 10, 2010, Pages

  Seo, H W ^a   Tu, L W ^b   Chen, Q Y ^b   Ho, C Y ^b   Lin, Y T ^b   Wu, K L ^b   Jang, D J ^b   Norman, D P ^a   Ho, N J ^b  

^a University of Arkansas ^*  (United States)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL WIDTHS; FORWARD BIAS; III-NITRIDE; NANOROD DEVICES; OPTICALLY PUMPED; PHOTOCARRIER; PHOTOGATES; PIN DIODE; REVERSE BIAS; SI SUBSTRATES;

FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; MESFET DEVICES;

NANORODS;

EID: 77949690503     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3330876     Document Type: Article

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