Epitaxial growth of cubic and hexagonal InN thin films via plasma-assisted atomic layer epitaxy

Crystal Growth and Design

Volumn 13, Issue 4, 2013, Pages 1485-1490

  Nepal, Neeraj ^a   Mahadik, Nadeemullah A ^a   Nyakiti, Luke O ^a   Qadri, Syed B ^a   Mehl, Michael J ^a   Hite, Jennifer K ^a   Eddy, Charles R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE SAPPHIRE; DEPOSITION TECHNIQUE; FACE-CENTERED CUBIC LATTICES; GROWTH PROCESS; HEXAGONAL PHASE; INN THIN FILMS; LOWER TEMPERATURES; TEMPERATURE WINDOW;

GROWTH (MATERIALS); SAPPHIRE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; X RAY DIFFRACTION;

EPITAXIAL GROWTH;

EID: 84875793518     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg3016172     Document Type: Article

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