High quality InN/GaN hterestructures grown by migration enhanced metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 84, Issue 11, 2004, Pages 1892-1894

  Fareed, R S Qhalid ^a   Jain, R ^a   Gaska, R ^a   Shur, M S ^a   Wu, J ^b   Walukiewicz, W ^b   Khan, M Asif ^c  

^a SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IONIZED IMPURITY SCATTERING; POLAR OPTICAL SCATTERING;

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; CARRIER CONCENTRATION; ELECTRON MOBILITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTOLUMINESCENCE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 1842637260     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1686889     Document Type: Article

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