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Volumn 109, Issue 4, 2011, Pages

Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

(7) Roul, Basanta a,b Rajpalke, Mohana K a Bhat, Thirumaleshwara N a Kumar, Mahesh a,b Sinha, Neeraj c Kalghatgi, A T b Krupanidhi, S B a

a INDIAN INSTITUTE OF SCIENCE (India)

b BHARAT ELECTRONICS LIMITED (India)

c Office of Principal Scientific Advisor (India)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CURRENT TRANSPORT; ELECTRICAL TRANSPORT; ELECTRICAL TRANSPORT PROPERTIES; HETEROSTRUCTURE INTERFACES; HETEROSTRUCTURES; IDEALITY FACTORS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROOM TEMPERATURE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; THERMIONIC FIELD EMISSION;

DIODES; ELECTRIC PROPERTIES; FIELD EMISSION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION; TRANSPORT PROPERTIES;

SCHOTTKY BARRIER DIODES;

EID: 79952171936 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3549685 Document Type: Article

Times cited : (24)

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