-
3
-
-
15844407150
-
-
10.1109/TNANO.2004.842073
-
R. Chau, S. Datta, M. Doczy, B. Doyle, J. Jin, J. Kavalieros, A. Majumdar, M. Metz, and M. Radosavljevic, IEEE Trans. Nanotechnol. 4, 153 (2005). 10.1109/TNANO.2004.842073
-
(2005)
IEEE Trans. Nanotechnol.
, vol.4
, pp. 153
-
-
Chau, R.1
Datta, S.2
Doczy, M.3
Doyle, B.4
Jin, J.5
Kavalieros, J.6
Majumdar, A.7
Metz, M.8
Radosavljevic, M.9
-
5
-
-
79551654686
-
-
10.1063/1.3533959
-
E. O'Connor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, S. B. Newcomb, R. Contreras, M. Milojevic, G. Hughes, M. E. Pemble, R. M. Wallace, and P. K. Hurley, J. Appl. Phys. 109, 024101 (2011). 10.1063/1.3533959
-
(2011)
J. Appl. Phys.
, vol.109
, pp. 024101
-
-
O'Connor, E.1
Brennan, B.2
Djara, V.3
Cherkaoui, K.4
Monaghan, S.5
Newcomb, S.B.6
Contreras, R.7
Milojevic, M.8
Hughes, G.9
Pemble, M.E.10
Wallace, R.M.11
Hurley, P.K.12
-
6
-
-
69049116282
-
-
10.1063/1.3204465
-
R. Engel-Herbert, Y. Hwang, J. Cagnon, and S. Stemmer, Appl. Phys. Lett. 95, 062908 (2009). 10.1063/1.3204465
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 062908
-
-
Engel-Herbert, R.1
Hwang, Y.2
Cagnon, J.3
Stemmer, S.4
-
7
-
-
77955896094
-
-
10.1063/1.3465524
-
Y. Hwang, R. Engel-Herbert, N. G. Rudawsli, and S. Stemmer, J. Appl. Phys. 108, 034111 (2010). 10.1063/1.3465524
-
(2010)
J. Appl. Phys.
, vol.108
, pp. 034111
-
-
Hwang, Y.1
Engel-Herbert, R.2
Rudawsli, N.G.3
Stemmer, S.4
-
9
-
-
84860348381
-
-
10.1063/1.4704925
-
I. Krylov, L. Kornblum, A. Gavrilov, D. Ritter, and M. Eizenberg, Appl. Phys. Lett. 100, 173508 (2012). 10.1063/1.4704925
-
(2012)
Appl. Phys. Lett.
, vol.100
, pp. 173508
-
-
Krylov, I.1
Kornblum, L.2
Gavrilov, A.3
Ritter, D.4
Eizenberg, M.5
-
10
-
-
80052561622
-
-
10.1016/j.cossms.2011.04.005
-
C. L. Hinkle, E. M. Vogel, P. D. Ye, and R. M. Wallace, Curr. Opin. Solid State Mater. Sci. 15, 188-207 (2011). 10.1016/j.cossms.2011.04.005
-
(2011)
Curr. Opin. Solid State Mater. Sci.
, vol.15
, pp. 188-207
-
-
Hinkle, C.L.1
Vogel, E.M.2
Ye, P.D.3
Wallace, R.M.4
-
11
-
-
79958062237
-
-
10.1016/j.mee.2011.03.053
-
W. Wang, C. L. Hinkle, E. M. Vogel, K. Cho, and R. M. Wallace, Microelectron. Eng. 88, 1061 (2011). 10.1016/j.mee.2011.03.053
-
(2011)
Microelectron. Eng.
, vol.88
, pp. 1061
-
-
Wang, W.1
Hinkle, C.L.2
Vogel, E.M.3
Cho, K.4
Wallace, R.M.5
-
12
-
-
78650590738
-
-
10.1021/jp107880r
-
W. Wang, K. Xiong, R. M. Wallace, and K. Cho, J. Phys. Chem. C 114, 22610 (2010). 10.1021/jp107880r
-
(2010)
J. Phys. Chem. C
, vol.114
, pp. 22610
-
-
Wang, W.1
Xiong, K.2
Wallace, R.M.3
Cho, K.4
-
14
-
-
65249129755
-
-
10.1063/1.3120554
-
J. Robertson, Appl. Phys. Lett. 94, 152104 (2009). 10.1063/1.3120554
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 152104
-
-
Robertson, J.1
-
15
-
-
52949091542
-
-
10.1016/j.apsusc.2008.03.051
-
H. Hasegava and M. Akazawa, Appl. Surf. Sci. 254, 8005-8015 (2008). 10.1016/j.apsusc.2008.03.051
-
(2008)
Appl. Surf. Sci.
, vol.254
, pp. 8005-8015
-
-
Hasegava, H.1
Akazawa, M.2
-
17
-
-
79961084696
-
-
10.1063/1.3615784
-
M. Tallarida, C. Adelmann, A. Delabie, S. Van Elshocht, M. Caymax, and D. Schmeisser, Appl. Phys. Lett. 99, 042906 (2011). 10.1063/1.3615784
-
(2011)
Appl. Phys. Lett.
, vol.99
, pp. 042906
-
-
Tallarida, M.1
Adelmann, C.2
Delabie, A.3
Van Elshocht, S.4
Caymax, M.5
Schmeisser, D.6
-
18
-
-
65449127795
-
-
10.1063/1.3120546
-
L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, and R. M. Wallace, Appl. Phys. Lett. 94, 162101 (2009). 10.1063/1.3120546
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 162101
-
-
Hinkle, L.1
Milojevic, M.2
Brennan, B.3
Sonnet, A.M.4
Aguirre-Tostado, F.S.5
Hughes, G.J.6
Vogel, E.M.7
Wallace, R.M.8
-
19
-
-
0142020894
-
-
10.1063/1.1601596
-
M. J. Hale, S. I. Yi, J. Z. Sexton, A. C. Kummel, and M. Passlack, J. Chem. Phys. 119, 6719 (2003). 10.1063/1.1601596
-
(2003)
J. Chem. Phys.
, vol.119
, pp. 6719
-
-
Hale, M.J.1
Yi, S.I.2
Sexton, J.Z.3
Kummel, A.C.4
Passlack, M.5
-
20
-
-
36549081349
-
-
10.1109/LED.2007.910009
-
R. J. W. Hill, D. A. J. Moran, L. Xu, Z. Haiping, D. Macintire, S. Thoms, A. Asenov, P. Zurcher, K. Rajagopalan, J. Abrokwah, R. Droopad, M. Passlack, and I. G. Thayne, IEEE Electron Device Lett. 28, 1080 (2007). 10.1109/LED.2007.910009
-
(2007)
IEEE Electron Device Lett.
, vol.28
, pp. 1080
-
-
Hill, R.J.W.1
Moran, D.A.J.2
Xu, L.3
Haiping, Z.4
MacIntire, D.5
Thoms, S.6
Asenov, A.7
Zurcher, P.8
Rajagopalan, K.9
Abrokwah, J.10
Droopad, R.11
Passlack, M.12
Thayne, I.G.13
-
21
-
-
2342458351
-
-
10.1016/j.apsusc.2004.01.067
-
M. V. Lebedev, D. Ensling, R. Hunger, T. Mayer, and W. Jaegermann, Appl. Surf. Sci. 229, 226-232 (2004). 10.1016/j.apsusc.2004.01.067
-
(2004)
Appl. Surf. Sci.
, vol.229
, pp. 226-232
-
-
Lebedev, M.V.1
Ensling, D.2
Hunger, R.3
Mayer, T.4
Jaegermann, W.5
-
22
-
-
84857284913
-
Physics and technology of high-k materials 9
-
10.1149/1.3633042
-
I. Krylov, A. Gavrilov, S. Cohen, D. Ritter, and M. Eizenberg, Physics and technology of high-k materials 9., ECS Trans. 41 (3), 255-265 (2011). 10.1149/1.3633042
-
(2011)
ECS Trans.
, vol.41
, Issue.3
, pp. 255-265
-
-
Krylov, I.1
Gavrilov, A.2
Cohen, S.3
Ritter, D.4
Eizenberg, M.5
-
24
-
-
79953043383
-
-
10.1109/LED.2011.2105241
-
Y. Yuan, L. Wang, B. Yu, B. Shin, J. Ahn, P. C. McIntyre, P. M. Asbeck, M. J. Rodwell, and Y. Taur, IEEE Electron Device Lett. 32, 485 (2011). 10.1109/LED.2011.2105241
-
(2011)
IEEE Electron Device Lett.
, vol.32
, pp. 485
-
-
Yuan, Y.1
Wang, L.2
Yu, B.3
Shin, B.4
Ahn, J.5
McIntyre, P.C.6
Asbeck, P.M.7
Rodwell, M.J.8
Taur, Y.9
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