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Volumn 101, Issue 6, 2012, Pages

Correlation between Ga-O signature and midgap states at the Al 2O 3/In 0.53Ga 0.47As interface

Author keywords

[No Author keywords available]

Indexed keywords

AS INTERFACES; GATE STACKS; MID-GAP INTERFACES; OH CONCENTRATION; PRE-DEPOSITION; SURFACE SPECIES; WEAK INVERSIONS; X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES;

EID: 84865127705     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4745012     Document Type: Article
Times cited : (32)

References (26)
  • 14
    • 65249129755 scopus 로고    scopus 로고
    • 10.1063/1.3120554
    • J. Robertson, Appl. Phys. Lett. 94, 152104 (2009). 10.1063/1.3120554
    • (2009) Appl. Phys. Lett. , vol.94 , pp. 152104
    • Robertson, J.1
  • 15
    • 52949091542 scopus 로고    scopus 로고
    • 10.1016/j.apsusc.2008.03.051
    • H. Hasegava and M. Akazawa, Appl. Surf. Sci. 254, 8005-8015 (2008). 10.1016/j.apsusc.2008.03.051
    • (2008) Appl. Surf. Sci. , vol.254 , pp. 8005-8015
    • Hasegava, H.1    Akazawa, M.2
  • 22
    • 84857284913 scopus 로고    scopus 로고
    • Physics and technology of high-k materials 9
    • 10.1149/1.3633042
    • I. Krylov, A. Gavrilov, S. Cohen, D. Ritter, and M. Eizenberg, Physics and technology of high-k materials 9., ECS Trans. 41 (3), 255-265 (2011). 10.1149/1.3633042
    • (2011) ECS Trans. , vol.41 , Issue.3 , pp. 255-265
    • Krylov, I.1    Gavrilov, A.2    Cohen, S.3    Ritter, D.4    Eizenberg, M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.