Inversion-type enhancement-mode Hf O2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

Applied Physics Letters

Volumn 92, Issue 3, 2008, Pages

  Kim, Hyoung Sub ^a   Ok, I ^a   Zhang, M ^a   Zhu, F ^a   Park, S ^a   Yum, J ^a   Zhao, H ^a   Lee, Jack C ^a   Oh, Jungwoo ^b   Majhi, Prashant ^b  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRIC CURRENTS; HAFNIUM COMPOUNDS; MOS DEVICES; THIN FILMS; TRANSCONDUCTANCE;

GAAS MOSFETS; GATE LENGTH; THIN GE LAYER;

FIELD EFFECT TRANSISTORS;

EID: 38549171799     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2838294     Document Type: Article

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