Smart silicon: Switching between p-and n-conduction under compression

Applied Physics Letters

Volumn 101, Issue 6, 2012, Pages

  Ovsyannikov, Sergey V ^a,b   Korobeinikov, Igor V ^c   Morozova, Natalia V ^c   Misiuk, Andrzej ^d   Abrosimov, Nikolai V ^e   Shchennikov, Vladimir V ^c  

^a UNIVERSITÄT BAYREUTH   (Germany)

^b INSTITUTE OF SOLID STATE CHEMISTRY   (Russian Federation)

^c INSTITUTE OF METAL PHYSICS   (Russian Federation)

^d ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^e LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPENSATED STATE; ELECTRICAL CONDUCTION; HIGH PRESSURE; SILICON-BASED DEVICES; SMART LAYERS; UNDOPED SILICON;

CRYSTAL LATTICES; GERMANIUM; RAMAN SPECTROSCOPY; SOLIDS;

SILICON;

EID: 84865142765     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4742345     Document Type: Article

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