Size-dependent-transport study of in 0.53Ga 0.47As gate-all-around nanowire MOSFETs: Impact of quantum confinement and volume inversion

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 967-969

  Gu, Jiangjiang J ^a   Wu, Heng ^a   Liu, Yiqun ^b   Neal, Adam T ^a   Gordon, Roy G ^c   Ye, Peide D ^a  

^a Purdue University   (United States)

^b IBM MICROELECTRONICS   (United States)

^c HARVARD UNIVERSITY   (United States)

Author keywords

Gate all around (GAA); InGaAs; nanowire

Indexed keywords

CHANNEL LENGTH; EFFECTIVE MOBILITIES; GATE-ALL-AROUND; INGAAS; MOS-FET; NANOWIRE MOSFETS; ON-CURRENTS; QUANTUM MECHANICAL SIMULATIONS; TOP-DOWN APPROACH; VOLUME INVERSION;

NANOWIRES; QUANTUM CONFINEMENT; SEMICONDUCTING INDIUM; TRANSPORT PROPERTIES;

MOSFET DEVICES;

EID: 84862846095     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2194690     Document Type: Article

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