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Volumn 48, Issue 4, 2008, Pages 526-530
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Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric
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Author keywords
[No Author keywords available]
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Indexed keywords
LEAKAGE CURRENTS;
MOS CAPACITORS;
OPTIMIZATION;
PERMITTIVITY;
SPUTTERING;
OXIDE THICKNESS;
POST-DEPOSITION ANNEAL (PDA);
GATE DIELECTRICS;
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EID: 42649115113
PISSN: 00262714
EISSN: None
Source Type: Journal
DOI: 10.1016/j.microrel.2007.11.004 Document Type: Article |
Times cited : (23)
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References (12)
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