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Volumn 48, Issue 4, 2008, Pages 526-530

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; MOS CAPACITORS; OPTIMIZATION; PERMITTIVITY; SPUTTERING;

EID: 42649115113     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.11.004     Document Type: Article
Times cited : (23)

References (12)
  • 4
    • 10044277098 scopus 로고    scopus 로고
    • Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-κ gate dielectric
    • Wu N., Zhang Q.C., Zhu C.X., Chan D.S.H., Li M.F., Balasubramanian N., et al. Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-κ gate dielectric. Appl Phys Lett 85 18 (2004) 4127
    • (2004) Appl Phys Lett , vol.85 , Issue.18 , pp. 4127
    • Wu, N.1    Zhang, Q.C.2    Zhu, C.X.3    Chan, D.S.H.4    Li, M.F.5    Balasubramanian, N.6
  • 7
    • 0035278195 scopus 로고    scopus 로고
    • 2/Si interface on direct tunneling current in ultrathin MOSFETs
    • 2/Si interface on direct tunneling current in ultrathin MOSFETs. Solid State Electron 45 3 (2001) 531
    • (2001) Solid State Electron , vol.45 , Issue.3 , pp. 531
    • Mao, L.F.1    Tan, C.H.2    Xu, M.Z.3
  • 8
    • 0001188528 scopus 로고
    • An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
    • Terman L.M. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes. Solid State Electron 5 (1962) 285
    • (1962) Solid State Electron , vol.5 , pp. 285
    • Terman, L.M.1
  • 11
    • 33744774148 scopus 로고    scopus 로고
    • Improved electrical properties of Germanium MOS capacitor with gate dielectric grown in wet-NO ambient
    • Xu J.P., Lai P.T., Li C.X., Zou X., and Chan C.L. Improved electrical properties of Germanium MOS capacitor with gate dielectric grown in wet-NO ambient. IEEE Electron Dev Lett 27 6 (2006) 439
    • (2006) IEEE Electron Dev Lett , vol.27 , Issue.6 , pp. 439
    • Xu, J.P.1    Lai, P.T.2    Li, C.X.3    Zou, X.4    Chan, C.L.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.