HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer

Applied Physics Letters

Volumn 93, Issue 10, 2008, Pages

  Kim, Hyoung Sub ^a   Ok, I ^a   Zhang, M ^a   Zhu, F ^a   Park, S ^a   Yum, J ^a   Zhao, H ^a   Lee, Jack C ^a   Majhi, Prashant ^b  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; FIELD EFFECT TRANSISTORS; GERMANIUM; HAFNIUM; HAFNIUM COMPOUNDS; INDIUM PHOSPHIDE; LEAKAGE CURRENTS; MOS CAPACITORS; MOSFET DEVICES; PASSIVATION; SEMICONDUCTING INDIUM; SEMICONDUCTOR MATERIALS; TANTALUM COMPOUNDS; TRANSISTORS;

GERMANIUM (GE); INDIUM PHOSPHIDE (INP); INP SUBSTRATES; MOSFETS;

SUBSTRATES;

EID: 51749110431     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2961119     Document Type: Article

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