-
1
-
-
0033583043
-
Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation
-
DOI 10.1126/science.283.5409.1897
-
M. Hong, J. Kwo, A. R. Kortan, J. P. Mannaerts, and A. M. Sergent, Science 0036-8075 283, 1897 (1999). 10.1126/science.283.5409.1897 (Pubitemid 29144203)
-
(1999)
Science
, vol.283
, Issue.5409
, pp. 1897-1900
-
-
Hong, M.1
Kwo, J.2
Kortan, A.R.3
Mannaerts, J.P.4
Sergent, A.M.5
-
2
-
-
20844440321
-
3 gate dielectrics on GaAs grown by atomic layer deposition
-
DOI 10.1063/1.1899745, 152904
-
M. M. Frank, G. D. Wilk, D. Starodub, T. Gustafsson, E. Garfunkel, Y. J. Chabal, J. Grazul, and D. A. Muller, Appl. Phys. Lett. 0003-6951 86, 152904 (2005). 10.1063/1.1899745 (Pubitemid 40861439)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.15
, pp. 1-3
-
-
Frank, M.M.1
Wilk, G.D.2
Starodub, D.3
Gustafsson, T.4
Garfunkel, E.5
Chabal, Y.J.6
Grazul, J.7
Muller, D.A.8
-
3
-
-
0042341502
-
-
0003-6951, 10.1063/1.1590743
-
P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, S. N. G. Chu, S. Nakahara, H. -J. L. Gossmann, J. P. Mannaerts, M. Hong, K. K. Ng, and J. Bude, Appl. Phys. Lett. 0003-6951 83, 180 (2003). 10.1063/1.1590743
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 180
-
-
Ye, P.D.1
Wilk, G.D.2
Yang, B.3
Kwo, J.4
Chu, S.N.G.5
Nakahara, S.6
Gossmann, H.-J.L.7
Mannaerts, J.P.8
Hong, M.9
Ng, K.K.10
Bude, J.11
-
4
-
-
42349100138
-
Inversion mode n -channel GaAs field effect transistor with high- k /metal gate
-
DOI 10.1063/1.2912027
-
J. P. de Souza, E. Kiewra, Y. Sun, A. Callegari, D. K. Sadana, G. Shahidi, D. J. Webb, J. Fompeyrine, R. Germann, C. Rossel, and C. Marchiori, Appl. Phys. Lett. 0003-6951 92, 153508 (2008). 10.1063/1.2912027 (Pubitemid 351555776)
-
(2008)
Applied Physics Letters
, vol.92
, Issue.15
, pp. 153508
-
-
De Souza, J.P.1
Kiewra, E.2
Sun, Y.3
Callegari, A.4
Sadana, D.K.5
Shahidi, G.6
Webb, D.J.7
Fompeyrine, J.8
Germann, R.9
Rossel, C.10
Marchiori, C.11
-
5
-
-
53349092047
-
-
0003-6951, 10.1063/1.2992560
-
A. Molle, S. Spiga, A. Andreozzi, M. Fanciulli, G. Brammertz, and M. Meuris, Appl. Phys. Lett. 0003-6951 93, 133504 (2008). 10.1063/1.2992560
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 133504
-
-
Molle, A.1
Spiga, S.2
Andreozzi, A.3
Fanciulli, M.4
Brammertz, G.5
Meuris, M.6
-
6
-
-
0037766787
-
-
0741-3106, 10.1109/LED.2003.812144
-
P. D. Ye, G. D. Wilk, J. Kwo, B. Yang, H. -J. L. Gossmann, M. Frei, S. N. G. Chu, J. P. Mannaerts, M. Sergent, M. Hong, K. K. Ng, and J. Bude, IEEE Electron Device Lett. 0741-3106 24, 209 (2003). 10.1109/LED.2003.812144
-
(2003)
IEEE Electron Device Lett.
, vol.24
, pp. 209
-
-
Ye, P.D.1
Wilk, G.D.2
Kwo, J.3
Yang, B.4
Gossmann, H.-J.L.5
Frei, M.6
Chu, S.N.G.7
Mannaerts, J.P.8
Sergent, M.9
Hong, M.10
Ng, K.K.11
Bude, J.12
-
7
-
-
33750015764
-
3 plasma pretreatment
-
DOI 10.1063/1.2363145
-
H. L. Lu, L. Sun, S. J. Ding, M. Xu, D. W. Zhang, and L. K. Wang, Appl. Phys. Lett. 0003-6951 89, 152910 (2006). 10.1063/1.2363145 (Pubitemid 44570589)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.15
, pp. 152910
-
-
Lu, H.-L.1
Sun, L.2
Ding, S.-J.3
Xu, M.4
Zhang, D.W.5
Wang, L.-K.6
-
8
-
-
65249129755
-
-
0003-6951, 10.1063/1.3120554
-
J. Robertson, Appl. Phys. Lett. 0003-6951 94, 152104 (2009). 10.1063/1.3120554
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 152104
-
-
Robertson, J.1
-
9
-
-
65449127795
-
-
0003-6951, 10.1063/1.3120546
-
C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, and R. M. Wallace, Appl. Phys. Lett. 0003-6951 94, 162101 (2009). 10.1063/1.3120546
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 162101
-
-
Hinkle, C.L.1
Milojevic, M.2
Brennan, B.3
Sonnet, A.M.4
Aguirre-Tostado, F.S.5
Hughes, G.J.6
Vogel, E.M.7
Wallace, R.M.8
-
10
-
-
33750144498
-
2 atomic layer deposition on the hydroxylated GaAs (001) -4×2 surface
-
DOI 10.1063/1.2370425
-
H. L. Lu, M. Xu, S. J. Ding, W. Chen, D. W. Zhang, and L. K. Wang, Appl. Phys. Lett. 0003-6951 89, 162905 (2006). 10.1063/1.2370425 (Pubitemid 44601706)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.16
, pp. 162905
-
-
Lu, H.-L.1
Xu, M.2
Ding, S.-J.3
Chen, W.4
Zhang, D.W.5
Wang, L.-K.6
-
11
-
-
42149175974
-
Effects of interfacial sulfidization and thermal annealing on the electrical properties of an atomic-layer-deposited Al2 O3 gate dielectric on GaAs substrate
-
DOI 10.1063/1.2901167
-
C. C. Cheng, C. H. Chien, G. L. Luo, C. H. Yang, C. C. Chang, C. Y. Chang, C. C. Kei, C. N. Hsiao, and T. P. Perng, J. Appl. Phys. 0021-8979 103, 074102 (2008). 10.1063/1.2901167 (Pubitemid 351538024)
-
(2008)
Journal of Applied Physics
, vol.103
, Issue.7
, pp. 074102
-
-
Cheng, C.-C.1
Chien, C.-H.2
Luo, G.-L.3
Yang, C.-H.4
Chang, C.-C.5
Chang, C.-Y.6
Kei, C.-C.7
Hsiao, C.-N.8
Perng, T.-P.9
-
12
-
-
30844441641
-
Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer
-
DOI 10.1063/1.2164327, 022106
-
S. Koveshnikov, W. Tsai, I. Ok, J. C. Lee, V. Torkanov, M. Yakimov, and S. Oktyabrsky, Appl. Phys. Lett. 0003-6951 88, 022106 (2006). 10.1063/1.2164327 (Pubitemid 43102705)
-
(2006)
Applied Physics Letters
, vol.88
, Issue.2
, pp. 1-3
-
-
Koveshnikov, S.1
Tsai, W.2
Ok, I.3
Lee, J.C.4
Torkanov, V.5
Yakimov, M.6
Oktyabrsky, S.7
-
13
-
-
33745434697
-
2 (equivalent oxide thickness=1.1 nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation
-
DOI 10.1063/1.2216023
-
H. Kim, I. Ok, M. Zhang, C. Choi, T. Lee, F. Zhu, G. Thareja, L. Yu, and J. C. Lee, Appl. Phys. Lett. 0003-6951 88, 252906 (2006). 10.1063/1.2216023 (Pubitemid 43954830)
-
(2006)
Applied Physics Letters
, vol.88
, Issue.25
, pp. 252906
-
-
Kim, H.-S.1
Ok, I.2
Zhang, M.3
Choi, C.4
Lee, T.5
Zhu, F.6
Thareja, G.7
Yu, L.8
Lee, J.C.9
-
14
-
-
0942277725
-
-
0003-6951, 10.1063/1.1635068
-
M. Passlack, N. Medendorp, R. Gregory, and D. Braddock, Appl. Phys. Lett. 0003-6951 83, 5262 (2003). 10.1063/1.1635068
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 5262
-
-
Passlack, M.1
Medendorp, N.2
Gregory, R.3
Braddock, D.4
-
15
-
-
35548988846
-
Frequency dispersion reduction and bond conversion on n -type GaAs by in situ surface oxide removal and passivation
-
DOI 10.1063/1.2801512
-
C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, J. Kim, and R. M. Wallace, Appl. Phys. Lett. 0003-6951 91, 163512 (2007). 10.1063/1.2801512 (Pubitemid 350004074)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.16
, pp. 163512
-
-
Hinkle, C.L.1
Sonnet, A.M.2
Vogel, E.M.3
McDonnell, S.4
Hughes, G.J.5
Milojevic, M.6
Lee, B.7
Aguirre-Tostado, F.S.8
Choi, K.J.9
Kim, J.10
Wallace, R.M.11
-
16
-
-
34547912197
-
Electrical and interfacial characterization of atomic layer deposited high-Κ gate dielectrics on GaAs for advanced CMOS devices
-
DOI 10.1109/TED.2007.901261
-
G. K. Dalapati, Y. Tong, W. -Y. Loh, H. K. Mun, and B. J. Cho, IEEE Trans. Electron Devices 0018-9383 54, 1831 (2007). 10.1109/TED.2007.901261 (Pubitemid 47260257)
-
(2007)
IEEE Transactions on Electron Devices
, vol.54
, Issue.8
, pp. 1831-1837
-
-
Dalapati, G.K.1
Tong, Y.2
Loh, W.-Y.3
Mun, H.-K.4
Cho, B.J.5
-
17
-
-
39749157907
-
GaAs interfacial self-cleaning by atomic layer deposition
-
DOI 10.1063/1.2883956
-
C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, H. C. Kim, J. Kim, and R. M. Wallace, Appl. Phys. Lett. 0003-6951 92, 071901 (2008). 10.1063/1.2883956 (Pubitemid 351304840)
-
(2008)
Applied Physics Letters
, vol.92
, Issue.7
, pp. 071901
-
-
Hinkle, C.L.1
Sonnet, A.M.2
Vogel, E.M.3
McDonnell, S.4
Hughes, G.J.5
Milojevic, M.6
Lee, B.7
Aguirre-Tostado, F.S.8
Choi, K.J.9
Kim, H.C.10
Kim, J.11
Wallace, R.M.12
-
18
-
-
66749167599
-
-
0003-6951, 10.1063/1.3148723
-
H. D. Lee, T. Feng, L. Yu, D. Mastrogiovanni, A. Wan, T. Gustafsson, and E. Garfunkel, Appl. Phys. Lett. 0003-6951 94, 222108 (2009). 10.1063/1.3148723
-
(2009)
Appl. Phys. Lett.
, vol.94
, pp. 222108
-
-
Lee, H.D.1
Feng, T.2
Yu, L.3
Mastrogiovanni, D.4
Wan, A.5
Gustafsson, T.6
Garfunkel, E.7
-
19
-
-
51849098136
-
-
0003-6951, 10.1063/1.2966357
-
B. Shin, D. Choi, J. S. Harris, and P. C. McIntyre, Appl. Phys. Lett. 0003-6951 93, 052911 (2008). 10.1063/1.2966357
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 052911
-
-
Shin, B.1
Choi, D.2
Harris, J.S.3
McIntyre, P.C.4
-
20
-
-
68249087898
-
-
1882-0778, 10.1143/APEX.2.075503
-
G. He, S. Toyoda, Y. Shimogaki, and M. Oshima, Appl. Phys. Express 1882-0778 2, 075503 (2009). 10.1143/APEX.2.075503
-
(2009)
Appl. Phys. Express
, vol.2
, pp. 075503
-
-
He, G.1
Toyoda, S.2
Shimogaki, Y.3
Oshima, M.4
-
21
-
-
42549171457
-
Interface of atomic layer deposited Hf O2 films on GaAs (100) surfaces
-
DOI 10.1063/1.2908223
-
J. C. Hackley, J. D. Demaree, and T. Gougousi, Appl. Phys. Lett. 0003-6951 92, 162902 (2008). 10.1063/1.2908223 (Pubitemid 351590723)
-
(2008)
Applied Physics Letters
, vol.92
, Issue.16
, pp. 162902
-
-
Hackley, J.C.1
Demaree, J.D.2
Gougousi, T.3
-
22
-
-
36048932797
-
2 gate dielectric: Fabrication and characterization
-
DOI 10.1063/1.2806190
-
D. Shahrjerdi, D. I. Garcia-Gutierrez, T. Akyol, S. R. Bank, E. Tutuc, J. C. Lee, and S. K. Banerjee, Appl. Phys. Lett. 0003-6951 91, 193503 (2007). 10.1063/1.2806190 (Pubitemid 350097923)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.19
, pp. 193503
-
-
Shahrjerdi, D.1
Garcia-Gutierrez, D.I.2
Akyol, T.3
Bank, S.R.4
Tutuc, E.5
Lee, J.C.6
Banerjee, S.K.7
-
23
-
-
56249143080
-
-
0003-6951, 10.1063/1.2996261
-
C. Y. Kim, S. W. Cho, M. -H. Cho, K. B. Chung, C. -H. An, H. Kim, H. J. Lee, and D. -H. Ko, Appl. Phys. Lett. 0003-6951 93, 192902 (2008). 10.1063/1.2996261
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 192902
-
-
Kim, C.Y.1
Cho, S.W.2
Cho, M.-H.3
Chung, K.B.4
An, C.-H.5
Kim, H.6
Lee, H.J.7
Ko, D.-H.8
-
24
-
-
0033741925
-
-
0021-4922, 10.1143/JJAP.39.1074
-
M. Sugiyama, H. Itoh, J. Aoyama, H. Komiyama, and Y. Shimogaki, Jpn. J. Appl. Phys., Part 1 0021-4922 39, 1074 (2000). 10.1143/JJAP.39.1074
-
(2000)
Jpn. J. Appl. Phys., Part 1
, vol.39
, pp. 1074
-
-
Sugiyama, M.1
Itoh, H.2
Aoyama, J.3
Komiyama, H.4
Shimogaki, Y.5
-
25
-
-
56849122383
-
-
0003-6951, 10.1063/1.3054348
-
M. Milojevic, C. L. Hinkle, F. S. Aguirre-Tostado, H. C. Kim, E. M. Vogel, J. Kim, and R. M. Wallace, Appl. Phys. Lett. 0003-6951 93, 252905 (2008). 10.1063/1.3054348
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 252905
-
-
Milojevic, M.1
Hinkle, C.L.2
Aguirre-Tostado, F.S.3
Kim, H.C.4
Vogel, E.M.5
Kim, J.6
Wallace, R.M.7
-
26
-
-
55849145159
-
-
0003-6951, 10.1063/1.3020298
-
M. Kobayashi, P. T. Chen, Y. Sun, N. Goel, P. Majhi, M. Garner, W. Tsai, P. Pianetta, and Y. Nishi, Appl. Phys. Lett. 0003-6951 93, 182103 (2008). 10.1063/1.3020298
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 182103
-
-
Kobayashi, M.1
Chen, P.T.2
Sun, Y.3
Goel, N.4
Majhi, P.5
Garner, M.6
Tsai, W.7
Pianetta, P.8
Nishi, Y.9
-
27
-
-
45749149519
-
-
0003-6951, 10.1063/1.2949079
-
R. Suri, D. J. Lichtenwalner, and V. Misra, Appl. Phys. Lett. 0003-6951 92, 243506 (2008). 10.1063/1.2949079
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 243506
-
-
Suri, R.1
Lichtenwalner, D.J.2
Misra, V.3
-
28
-
-
33751109708
-
Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide
-
DOI 10.1063/1.2388246
-
M. Zhu, C. H. Tung, and Y. C. Yeo, Appl. Phys. Lett. 0003-6951 89, 202903 (2006). 10.1063/1.2388246 (Pubitemid 44772492)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.20
, pp. 202903
-
-
Zhu, M.1
Tung, C.-H.2
Yeo, Y.-C.3
|