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Volumn 95, Issue 21, 2009, Pages

Investigation on GaAs surface treated with dimethylaluminumhydride

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; GAAS SUBSTRATES; GAAS SURFACES; METALLIZATIONS; NATIVE OXIDES;

EID: 71549153174     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3268450     Document Type: Article
Times cited : (12)

References (29)
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  • 8
    • 65249129755 scopus 로고    scopus 로고
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    • J. Robertson, Appl. Phys. Lett. 0003-6951 94, 152104 (2009). 10.1063/1.3120554
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    • Robertson, J.1
  • 16
    • 34547912197 scopus 로고    scopus 로고
    • Electrical and interfacial characterization of atomic layer deposited high-Κ gate dielectrics on GaAs for advanced CMOS devices
    • DOI 10.1109/TED.2007.901261
    • G. K. Dalapati, Y. Tong, W. -Y. Loh, H. K. Mun, and B. J. Cho, IEEE Trans. Electron Devices 0018-9383 54, 1831 (2007). 10.1109/TED.2007.901261 (Pubitemid 47260257)
    • (2007) IEEE Transactions on Electron Devices , vol.54 , Issue.8 , pp. 1831-1837
    • Dalapati, G.K.1    Tong, Y.2    Loh, W.-Y.3    Mun, H.-K.4    Cho, B.J.5
  • 21
    • 42549171457 scopus 로고    scopus 로고
    • Interface of atomic layer deposited Hf O2 films on GaAs (100) surfaces
    • DOI 10.1063/1.2908223
    • J. C. Hackley, J. D. Demaree, and T. Gougousi, Appl. Phys. Lett. 0003-6951 92, 162902 (2008). 10.1063/1.2908223 (Pubitemid 351590723)
    • (2008) Applied Physics Letters , vol.92 , Issue.16 , pp. 162902
    • Hackley, J.C.1    Demaree, J.D.2    Gougousi, T.3
  • 28
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    • Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide
    • DOI 10.1063/1.2388246
    • M. Zhu, C. H. Tung, and Y. C. Yeo, Appl. Phys. Lett. 0003-6951 89, 202903 (2006). 10.1063/1.2388246 (Pubitemid 44772492)
    • (2006) Applied Physics Letters , vol.89 , Issue.20 , pp. 202903
    • Zhu, M.1    Tung, C.-H.2    Yeo, Y.-C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.