Diameter-independent hole mobility in Ge/Si Core/shell nanowire field effect transistors

Nano Letters

Volumn 14, Issue 2, 2014, Pages 585-591

  Nguyen, Binh Minh ^a,b   Taur, Yuan ^b   Picraux, S Tom ^a   Dayeh, Shadi A ^a,b  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

bandgap engineering; core shell; diameter dependence; field effect transistor; Ge Si; mobility; nanowire

Indexed keywords

EID: 84894219037     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl4037559     Document Type: Article

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