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Nano Letters

Volumn 13, Issue 3, 2013, Pages 1196-1202

Gate-modulated thermoelectric power factor of hole gas in Ge-Si core-shell nanowires

(5) Moon, Jaeyun a,c Kim, Ji Hun b,c Chen, Zack C Y b Xiang, Jie b,c Chen, Renkun a,c

a UNIVERSITY OF CALIFORNIA (United States)

b UNIVERSITY OF CALIFORNIA (United States)

c UNIVERSITY OF CALIFORNIA (United States)

Author keywords

epitaxy; field effect; heterostructures; Seebeck coefficient; thermoelectrics

Indexed keywords

CORE-SHELL NANOWIRES; ELECTRICAL CONDUCTIVITY; FIELD EFFECTS; IONIZED IMPURITY SCATTERING; THERMO-ELECTRIC MATERIALS; THERMOELECTRIC POWER FACTORS; THERMOELECTRIC TRANSPORT; THERMOELECTRICS;

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRIC POWER FACTOR; EPITAXIAL GROWTH; GASES; HETEROJUNCTIONS; NANOWIRES; SEEBECK COEFFICIENT; SHELLS (STRUCTURES); SILICON; SURFACE DEFECTS; THERMOELECTRIC POWER; THERMOELECTRICITY;

GERMANIUM;

EID: 84874962876 PISSN: 15306984 EISSN: 15306992 Source Type: Journal
DOI: 10.1021/nl304619u Document Type: Article

Times cited : (75)

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