Transport modulation in Ge/Si core/shell nanowires through controlled synthesis of doped Si shells

Nano Letters

Volumn 11, Issue 4, 2011, Pages 1406-1411

  Zhao, Yanjie ^a   Smith, Joshua T ^a,b   Appenzeller, Joerg ^a,b   Yang, Chen ^a  

^a PURDUE UNIVERSITY   (United States)

^b Purdue University   (United States)

Author keywords

Core shell nanowire; dopant; doped shell; growth rate; nanowire heterostructures; nanowire trimming; transport modulation

Indexed keywords

CORE/SHELL NANOWIRE; DOPANT; DOPED SHELL; NANOWIRE HETEROSTRUCTURES; TRANSPORT MODULATION;

CRYSTALS; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; GERMANIUM; HETEROJUNCTIONS; MODULATION; MORPHOLOGY; NANOWIRES; PASSIVATION; SHELLS (STRUCTURES); SILICON; TRIMMING; TUNING;

ELECTRIC WIRE;

GERMANIUM; NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; GERMANIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; PARTICLE SIZE; SILICON; SURFACE PROPERTIES;

EID: 79954471817     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl1031138     Document Type: Article

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