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Volumn 12, Issue 2, 2012, Pages 984-991

Genomic design of strong direct-gap optical transition in Si/Ge core/multishell nanowires

Author keywords

core shell nanowire; genetic algorithm; light emitting absorbing; Silicon

Indexed keywords

[110] ORIENTATION; ABSORPTION STRENGTH; BAND EDGE; BANDGAP TRANSITION; COMBINATORIAL EXPLOSION; DESIGN PRINCIPLES; DIPOLE-ALLOWED TRANSITIONS; ELECTRON HOLE PAIRS; ELECTRONIC FUNCTIONS; KNOW-HOW; LIGHT-EMITTING/ABSORBING; MOMENTUM SPACES; MULTISHELLS; NANO-STRUCTURING; OPTICAL ACTIVITY; OSCILLATOR STRENGTHS; PHOTON ABSORPTIONS; PSEUDOPOTENTIALS; SEMI-EMPIRICAL; SI SHELLS; SI-BASED MATERIALS; SI/GE; STRUCTURAL IMPERFECTIONS; THICK SAMPLES;

EID: 84856952507     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2040892     Document Type: Article
Times cited : (59)

References (59)
  • 2
    • 4444295713 scopus 로고    scopus 로고
    • Topics in Applied Physics No. 94; Springer-Verlag: Berlin
    • Pavesi, L.; Lockwood, D. J. Silicon photonics. Topics in Applied Physics No. 94; Springer-Verlag: Berlin, 2004.
    • (2004) Silicon Photonics
    • Pavesi, L.1    Lockwood, D.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.