Scaling of nanowire transistors

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 2846-2858

  Yu, Bo ^a   Wang, Lingquan ^a   Yuan, Yu ^a   Asbeck, Peter M ^a   Taur, Yuan ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Ballistic transport; MOSFETs; Nanowire; Quantum confinement; Scaling; Short channel effect (SCE)

Indexed keywords

BALLISTICS; EXPLOSIVES; MOSFET DEVICES; NANOSTRUCTURES; NANOWIRES; QUANTUM CHEMISTRY; QUANTUM CONFINEMENT; TRANSISTORS;

BALLISTIC TRANSPORT; CURRENT MODELS; DENSITY OF STATES; EXPERIMENTAL DATUMS; GATE LENGTHS; MODEL RESULTS; MOSFETS; NANOWIRE DEVICES; NANOWIRE MATERIALS; NANOWIRE TRANSISTORS; PERFORMANCE LIMITS; SCALE LENGTHS; SCALING; SCALING LIMITS; SHORT-CHANNEL EFFECT (SCE); SHORT-CHANNEL EFFECTS; STATE ENERGIES;

NANOSTRUCTURED MATERIALS;

EID: 56549083690     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2005163     Document Type: Article

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