Surface roughness induced electron mobility degradation in InAs nanowires

Nanotechnology

Volumn 24, Issue 37, 2013, Pages

  Wang, Fengyun ^a,b   Yip, Senpo ^a   Han, Ning ^a   Fok, Kitwa ^a   Lin, Hao ^a   Hou, Jared J ^a   Dong, Guofa ^a   Hung, Takfu ^a   Chan, K S ^a   Ho, Johnny C ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b QINGDAO UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; CHEMICAL VAPOR DEPOSITION; ELECTRON MOBILITY; ELECTRONS; FIELD EFFECT TRANSISTORS; III-V SEMICONDUCTORS; INDIUM ARSENIDE; LOW TEMPERATURE EFFECTS; NANOWIRES; TEMPERATURE; TEMPERATURE MEASUREMENT;

CHEMICAL VAPOR DEPOSITION METHODS; ELECTRICAL CHARACTERIZATION; FIELD-EFFECT MOBILITIES; LOW-TEMPERATURE MEASUREMENTS; MOBILITY DEGRADATION; NANOWIRE TRANSISTORS; OPTIMAL PERFORMANCE; SURFACE ROUGHNESS SCATTERING;

SURFACE ROUGHNESS;

EID: 84883194537     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/37/375202     Document Type: Article

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