Surface charge sensitivity of silicon nanowires: Size dependence

Nano Letters

Volumn 7, Issue 9, 2007, Pages 2608-2612

  Elfström, Niklas ^a   Juhasz, Robert ^a,b   Sychugov, Ilya ^a   Engfeldt, Torun ^a   Karlström, Amelie Eriksson ^a   Linnros, Jan ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BIOMOLECULES; LITHOGRAPHY; NANOSENSORS; SILICON ON INSULATOR TECHNOLOGY; SURFACE CHARGE; THRESHOLD VOLTAGE;

SILICON NANOWIRES; SURFACE CHARGE SENSITIVITY; THRESHOLD SHIFTS; TRANSISTOR STRUCTURE;

NANOWIRES;

NANOTUBE; SILICON;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; ELECTRICITY; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

COMPUTER SIMULATION; CRYSTALLIZATION; ELECTROSTATICS; MATERIALS TESTING; MODELS, CHEMICAL; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SEMICONDUCTORS; SILICON; SURFACE PROPERTIES;

EID: 34948846733     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0709017     Document Type: Article

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