Role of confinement on carrier transport in Ge-Si xGe 1- x core-shell nanowires

Nano Letters

Volumn 12, Issue 1, 2012, Pages 108-112

  Nah, Junghyo ^a   Dillen, David C ^a   Varahramyan, Kamran M ^a   Banerjee, Sanjay K ^a   Tutuc, Emanuel ^a  

^a The University of Texas at Austin   (United States)

Author keywords

confinement; core shell; germanium; heterostructure; Nanowire; silicon germanium

Indexed keywords

CARRIER CONFINEMENTS; CORE-SHELL; CORE-SHELL NANOWIRES; HIGH MOBILITY; HIGH SI CONTENT; HOLE CONFINEMENT; IMPURITY SCATTERING; ROOM TEMPERATURE; SI SHELLS; SILICON GERMANIUM; TEMPERATURE DEPENDENCE;

GERMANIUM; HETEROJUNCTIONS; MESFET DEVICES; NANOWIRES; PLASMA CONFINEMENT; SHELLS (STRUCTURES); SILICON;

CARRIER MOBILITY;

GERMANIUM; NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; GERMANIUM; MATERIALS TESTING; NANOSTRUCTURES; PARTICLE SIZE; SILICON; SURFACE PROPERTIES; TRANSISTORS, ELECTRONIC;

EID: 84855777896     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2030695     Document Type: Article

References (32)

1. Dingle, R.; Stormer, H. L.; Gossard, A. C.; Wiegmann, W. Appl. Phys. Lett. 2005, 665-667
2. Ambacher, O.; Smart, J.; Shealy, J. R.; Weimann, N. G.; Chu, K.; Murphy, M; Schaff, W. J.; Eastman, L. F.; Dimitrov, R.; Wittmer, L.; Stutzmann, M.; Rieger, W.; Hilsenbeck, J. J. Appl. Phys. 1999, 85, 3222-3233
3. Schaffler, F. Semicond. Sci. Technol. 1997, 12, 1515-1549
4. Takagi, S; Koga, J.; Toriumi, A. IEEE Int. Electron Devices Meeting (IEDM) Tech. Dig. 1997, 219-222
5. Lauhon, L. J.; Gudiksen, M. S.; Wang, D.; Lieber, C. M. Nature 2002, 420, 57-61
6. Skold, N.; Wagner, J. B.; Karlsson, G.; Hernán, T.; Seifert, W.; Pistol, M.-E.; Samuelson, L. Nano Lett. 2006, 6, 2743-2747
7. Li, Y.; Xiang, J.; Qian, F.; Gradečak, S.; Wu, Y.; Yan, H.; Blom, D. A.; Lieber, C. M. Nano Lett. 2006, 6, 1468-1473
8. Jiang, X.; Xiong, Q.; Nam, S.; Qian, F.; Li, Y.; Lieber, C. M. Nano Lett. 2007, 7, 3214-3218
9. Keplinger, M.; Martensson, T.; Stangl, J.; Wintersberger, E.; Mandl, B.; Kriegner, D.; Holy, V.; Bauer, G.; Deppert, K.; Samuelson, L. Nano Lett. 2009, 9, 1877-1882
10. Parkinson, P.; Joyce, H. J.; Gao, Q.; Tan, H. H.; Zhang, X.; Zou, J.; Jagadish, C.; Herz, L. M.; Johnston, M. B. Nano Lett. 2009, 9, 3349-3353
11. Auth, C. P.; Plummer, J. D. IEEE Electron Device Lett. 1997, 18, 74-76
12. Nilsson, H. A.; Duty, T.; Abay, S.; Wilson, C.; Wagner, J. B.; Thelander, C.; Delsing, P.; Samuelson, L. Nano Lett. 2008, 8, 872-875
13. Lu, W.; Xiang, J.; Timko, B. P.; Wu, Y.; Lieber, C. M. Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 10046-10051
14. Goldthorpe, I. A.; Marshall, A. F.; Mclntyre, P. C. Nano Lett. 2008, 8, 4081-4086
15. Wang, H.; Upmanyu, M.; Ciobanu, C. V. Nano Lett. 2008, 8, 4305-4311
16. Lee, H.; Choi, H. J. Nano Lett. 2010, 10, 2207-2210
17. Zhang, S.; Lopez, F. J.; Hyun, J. K.; Lauhon, L. J. Nano Lett. 2010, 10, 4483-4487
18. Wu, Y.; Fan, R.; Yang, P. Nano Lett. 2002, 2, 83-86
19. Clark, T. E.; Nimmatoori, P.; Lew, K.-K.; Pan, L.; Redwing, J. M.; Dickey, E. C. Nano Lett. 2008, 8, 1246-1252
20. Wen, C.-Y.; Reuter, M. C.; Bruley, J.; Tersoff, J.; Kodambaka, S.; Stach, E. A.; Ross, F. M. Science 2009, 326, 1247-1250
21. Xiang, J.; Lu, W.; Hu, Y.; Wu, Y.; Yan, H.; Lieber, C. M. Nature 2006, 441, 489-493
22. Zhang, L.; Tu, R.; Dai, H. Nano Lett. 2006, 6, 2785-2789
23. Hu, Y.; Xiang, Y.; Liang, G.; Yan, H.; Lieber, C. M. Nano Lett. 2008, 8, 925-930
24. Varahramyan, K. M.; Ferrer, D.; Tutuc, E.; Banerjee, S. K. Appl. Phys. Lett. 2009, 95, 033101
25. Van de Walle, C. G. Phys. Rev. B 1986, 34, 5621-5634
26. Rieger, M. M.; Vogl, P. Phys. Rev. B 1993, 48, 14276-14287
27. Schmidt, V.; McIntyre, P. C.; Gösele, U. Phys. Rev. B 2008, 235302
28. Bir, G. L.; Pikus, G. E Symmetry and Strain-Induced Effects in Semiconductors; Wiley: New York, 1974.
29. Zhang, Y. Phys. Rev. B. 1994, 49, 14352-14366
30. Morar, J. F.; Batson, P. E.; Tersoff, J. Phys. Rev. B 1993, 47, 4107-4110
31. Nah, J.; Varahramyan, K. M.; Liu, E.-S.; Banerjee, S. K.; Tutuc, E. Appl. Phys. Lett. 2008, 93, 203108
32. Jamil, M.; Liu, E.-S.; Ferdousi, F.; Donnelly, J. P.; Tutuc, E.; Banerjee, S. K. Semicond. Sci. Technol. 2010, 25, 045005