Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 919-921

  Choi, Yang Kyu ^a   Asano, Kazuya ^a   Lindert, Nick ^a   Subramanian, Vivek ^a   King, Tsu Jae ^a   Bokor, Jeffrey ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); LITHOGRAPHY; OXIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; THERMOOXIDATION; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY;

DEEP SUB TENTH MICRON CMOS TECHNOLOGY; OXIDE SPACER; SHORT CHANNEL EFFECT; SOURCE AND DRAIN; ULTRA THIN BODY;

MOSFET DEVICES;

EID: 0033314091     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)