One-dimensional hole gas in germanium/silicon nanowire heterostructures

Proceedings of the National Academy of Sciences of the United States of America

Volumn 102, Issue 29, 2005, Pages 10046-10051

  Lu, Wei ^a   Xiang, Jie ^a   Timko, Brian P ^a   Wu, Yue ^a   Lieber, Charles M ^a,b  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

Author keywords

Ballistic transport; Bandstructure design; Conductance quantization; Nanoscience; Single electron transistor

Indexed keywords

CARBON NANOTUBE; GERMANIUM; NANOPARTICLE; NANOWIRE; SILICON;

ARTICLE; CALCULATION; CHEMICAL STRUCTURE; CONTROL SYSTEM; DEVICE; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON; ENERGY; GAS; LOW TEMPERATURE; MEASUREMENT; OSCILLATION; POLARIZATION; PRIORITY JOURNAL; REPRODUCIBILITY; ROOM TEMPERATURE; SEMICONDUCTOR; STRUCTURE ANALYSIS; SYNTHESIS; SYSTEM ANALYSIS; TECHNIQUE; TEMPERATURE DEPENDENCE; TRANSPORT KINETICS;

EID: 22544473589     PISSN: 00278424     EISSN: None     Source Type: Journal    
DOI: 10.1073/pnas.0504581102     Document Type: Article

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