Direct measurement of coherency limits for strain relaxation in heteroepitaxial core/shell nanowires

Nano Letters

Volumn 13, Issue 5, 2013, Pages 1869-1876

  Dayeh, Shadi A ^a,b   Tang, Wei ^c   Boioli, Francesca ^d   Kavanagh, Karen L ^e   Zheng, He ^f   Wang, Jian ^a   Mack, Nathan H ^a   Swadener, Greg ^g   Huang, Jian Yu ^h   Miglio, Leo ^d   Tu, King Ning ^c   Picraux, S Tom ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d UNIVERSITY OF MILANO BICOCCA   (Italy)

^e SIMON FRASER UNIVERSITY   (Canada)

^f WUHAN UNIVERSITY   (China)

^g ASTON UNIVERSITY   (United Kingdom)

^h SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

core shell; critical thickness; germanium; Heterostructure; nanowire; silicon

Indexed keywords

CORE/SHELL; CORE/SHELL NANOWIRES; CRITICAL THICKNESS; DISLOCATION DYNAMICS SIMULATION; EXPERIMENTAL MEASUREMENTS; GLIDE OF DISLOCATIONS; IN-SITU TRANSMISSION; RELAXATION MECHANISM;

EPITAXIAL GROWTH; GEOMETRY; GERMANIUM; GRAIN GROWTH; HETEROJUNCTIONS; IN SITU PROCESSING; NANOWIRES; SILICON; STRAIN; STRAIN RELAXATION; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR GROWTH;

EID: 84877295155     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl3022434     Document Type: Article

References (41)

1. Lu, W.; Xiang, J.; Timko, B. P.; Wu, Y.; Lieber, C. M. One-Dimensional Hole Gas in Germanium/Silicon Nanowire Heterostructures Proc. Natl. Acad. Sci. 2000, 102, 10046
2. Liang, G.; Xiang, J.; Kharche, N.; Klimeck, G.; Lieber, C. M.; Lundstrom, M. Performance Analysis of a Ge/Si Core/Shell Nanowire Field Effect Transistor Nano Lett. 2007, 7, 642
3. Yang, L.; Musin, R. N.; Wang, X.-Q.; Chou, M. Y. Quantum Confinement Effect in Si/Ge core-shell Nanowires: First-Principles Calculations Phys. Rev. B 2008, 77, 195325
4. Peköz, R.; Raty, J.-Y. From Bare Ge Nanowire to Ge/Si Core/Shell Nanowires: A First-Principles Study Phys. Rev. B 2009, 80, 155432
5. Amato, M.; Palummo, M.; Ossicini, S. Reduced Quantum Confinement Effect and Electron-Hole Separation in SiGe Nanowires Phys. Rev. B 2009, 79, 201302
6. Peng, X.; Logan, P. Electronic Properties of Strained Si/Ge Core/Shell Nanowires Appl. Phys. Lett. 2010, 96, 143119
7. max = 340 GHz Appl. Phys. Lett. 2005, 87, 252109
8. Wojtczuk, S.; Chiu, P.; Zhang, X.; Derkacs, D.; Harris, C.; Pulver, D.; Timmons, M. InGaP/GaAs/InGaAs 41% Concentrator Cells Using Bi-facial Epi-growth. 35th IEEE Photovoltaic Specialists Conference (PVSC), June 20-25, 2010; pp 001259-001264.
9. Dayeh, S. A. Semicond. Sci. Technol. 2010, 25, 024004
10. Lee, M. L.; Fitzgerald, E. A.; Bulsara, M. T.; Currie, M. T.; Lochtefeld, A. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide- semiconductor field-effect transistors J. Appl. Phys. 2005, 97, 011101
11. Nainani, A. Engineering of Strained III-V Heterostructures for High Hole Mobility IEEE Int. Elect. Dev. Meeting 2009, 10.1109/IEDM.2009.5424267
12. Sun, X.; Liu, J.; Kimerling, C.; Michel, J. Room-Temperature Direct Bandgap electroluminescence from Ge-on-Si light-emitting Diodes Opt. Lett. 2009, 34, 1198
13. Ismail, K. Effect of Dislocations in Strained Si/SiGe on Electron Mobility J. Vac. Sci. Technol., B 1996, 14, 2776
14. Mooney, P. M.; Cohen, G. M.; Chu, J. O.; Murray, C. E. Elastic Strain Relaxation in Free-Standing SiGe/Si Structures Appl. Phys. Lett. 2004, 84, 1093
15. Wu, Y.; Cui, Y.; Huynh, L.; Barrelet, C. J.; Bell, C. B.; Lieber, C. M. Controlled Growth and Structures of Molecular-Scale Silicon Nanowires Nano Lett. 2004, 4, 433
16. Dayeh, S. A.; Picraux, S. T. Direct Observation of Nanoscale Size Effects in Ge Semiconductor Nanowire Growth Nano Lett. 2010, 10, 4032
17. Lauhon, L. J.; Gudiksen, M. S.; Wang, D.; Lieber, C. M. Epitaxial Core-shell and Core-multishell Nanowire Heterostructures Nature 2002, 420, 57
18. Liang, Y.; Nix, W. D.; Griffin, P. B.; Plummer, J. D. Critical Thickness Enhancement of Epitaxial SiGe Films Grown on Small Structures J. Appl. Phys. 2005, 97, 043519
19. Raychaudhuri, S.; Yu, E. T. Calculation of Critical Dimensions for Wurtzite and Cubic Zinc Blende Coaxial Nanowire Heterostructures J. Vac. Sci. Technol., B 2006, 24, 2053
20. Schmidt, V.; McIntyre, P. C.; Gösele, U. Morphological Instability of Misfit-Strained Core-Shell Nanowires Phys. Rev. B 2008, 77, 235302
21. Trammell, T. E.; Zhang, X.; Li, Y.; Chen, L.-Q.; Dickey, E. C. Equilibrium Strain-Energy Analysis of Coherently Strained Core-Shell Nanowires J. Cryst. Growth 2008, 310, 3084
22. Colin, J. Prismatic Dislocation Loops in Strained Core-Shell Nanowire Heterostructures Phys. Rev. B 2010, 82, 054118
23. Pearsall, T. P., Ed. Strained-Layer Superlattices: Materials Science and Technology, Vol. 33; Academic Press: New York, 1991.
24. Goldthorpe, I. A.; Marshall, A. F.; McIntyre, P. C. Synthesis and Strain Relaxation of Ge-Core/Si-Shell Nanowire Arrays Nano Lett. 2008, 8, 4081
25. Kavanagh, K. L.; Salfi, J.; Savelyev, I.; Blumin, M.; Ruda, H. E. Transport and Strain Relaxation in Wurtzite InAs-GaAs core-shell Heterowires Appl. Phys. Lett. 2011, 98, 152103
26. Kavanagh, K. L. Misfit Dislocations in Nanowire Heterostructures Semicond. Sci. Technol. 2010, 25, 024006
27. Kavanagh, K. L.; Saveliev, I.; Blumin, M.; Swadener, G.; Ruda, H. E. Faster radial strain relaxation in InAs-GaAs core-shell heterowires J. Appl. Phys. 2012, 111, 044301
28. Dayeh, S. A.; Gin, A. V.; Picraux, S. T. Advanced core/multi-shell Germanium/Silicon Nanowire Heterostructures: Morphology and Transport Appl. Phys. Lett. 2011, 98, 163112
29. Devincre, B.; Madec, R.; Monnet, G.; Queyreau, S.; Gatti, R.; Kubin, L. In Mechanics of Nano-objects: Presses de l'Ecole des Mines de Paris: Paris, 2011; p 85.
30. Groh, S.; Devincre, B.; Kubin, L.; Roos, A.; Feyel, F.; Chaboche, J.-L. Philos. Mag. Lett. 2003, 83, 303
31. Dayeh, S. A.; Wang, J.; Li, N.; Huang, J. Y.; Gin, A. V.; Picraux, S. T. Growth, Defect Formation and Morphology Control of Germanium-Silicon Semiconductor Nanowire Heterostructures Nano Lett. 2011, 11, 4200
32. Houghton, D. C. Strain Relaxation Kinetics in Si1-xGex/Si Heterostructures J. Appl. Phys. 1991, 70, 2136
33. Dayeh, S. A.; Mack, N. H.; Huang, J. Y.; Picraux, S. T. Advanced Core/Multi-shell Germanium/Silicon Nanowire Heterostructures: The Au-Diffusion Bottleneck Appl. Phys. Lett. 2011, 99, 023102
34. Goldthorpe, I. A.; Marshall, A. F.; McIntyre, P. C. Inhibiting Strain-Induced Surface Roughening: Dislocation-Free Ge/Si and Ge/SiGe Core-Shell Nanowires Nano Lett. 2009, 9, 3715
35. Zhao, Y.; Smith, J. T.; Appenzeller, J.; Yang, C. Transport Modulation in Ge/Si Core/Shell Nanowires Through Controlled Synthesis of Doped Si Shells Nano Lett. 2011, 11, 1406
36. Popovitz-Biro, R.; Kretinin, A.; Huth, P. V.; Shtrikman, H. InAs/GaAs Core-Shell Nanowires Cryst. Growth Des. 2011, 11, 3858
37. Dayeh, S. A.; Picraux, S. T. Direct Observation of Nanoscale Size Effects in Ge Semiconductor Nanowire Growth Nano Lett. 2010, 10, 4032
38. microMegas (mM) home page project. http://zig.onera.fr/mm-home-page
39. Liu, X. H.; Ross, F. M.; Schwarz, K. W. Phys. Rev. Lett. 2000, 85, 4088
40. Schwarz, K. W. Phys. Rev. Lett. 2003, 91, 145503
41. Grydlik, M.; Boioli, F.; Groiss, H.; Gatti, R.; Brehm, M.; Montalenti, F.; Devincre, B.; Schäffler, F.; Miglio, L. Appl. Phys. Lett. 2012, 101, 013119