The investigation of a 6.5-kV, 1-kA sic diode module for medium voltage converters

IEEE Transactions on Power Electronics

Volumn 29, Issue 5, 2014, Pages 2272-2280

  Filsecker, Felipe ^a   Alvarez, Rodrigo ^a   Bernet, Steffen ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Comparison; device characterization; medium voltage converter; NPC; SiC diode

Indexed keywords

COMPARISON; DEVICE CHARACTERIZATION; MEDIUM-VOLTAGE CONVERTER; NPC; SIC DIODES;

SEMICONDUCTOR DIODES; SILICON; SILICON CARBIDE; SWITCHING FREQUENCY;

DIODES;

EID: 84893116562     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2278190     Document Type: Article

References (28)

1. Q. Zhang, R. Callanan, M. Das, S.-H. Ryu, A. Agarwal, and J. Palmour, "SiC power devices formicrogrids," IEEE Trans. Power Electron., vol. 25, no. 12, pp. 2889-2896, Dec. 2010.
2. J. Rabkowski, D. Peftitsis, and H. Nee, "Silicon carbide power transistors: A new era in power electronics is initiated," IEEE Ind. Electron. Mag., vol. 6, no. 2, pp. 17-26, Jun. 2012.
3. G. Miller, "New semiconductor technologies challenge package and system setups," in Proc. 6th Int. Integr. Power Electron. Syst. Conf., Mar. 2010, pp. 1-6.
4. M. Treu, R. Rupp, and G. Solkner, "Reliability of SiC power devices and its influence on their commercialization-Review, status, and remaining issues," in Proc. IEEE Int. Reliabil. Phys. Symp., May 2012, pp. 156-161.
5. P. Friedrichs, "SiC power devices for industrial applications," in Proc. IEEE Int. Power Electron. Conf., Jun. 2010, pp. 3241-3248.
6. L. Cheng, A. K. Agarwal, M. O'Loughlin, C. Capell, K. Lam, C. Jonas, J. Richmond, A. Burk, J. W. Palmour, A. A. Ogunniyi, H. K. O'Brien, and C. J. Scozzie, "16 kV, 1 cm2, 4H-SiC PiN diodes for advanced highpower and high-temperature applications," in Materials Science Forum. vol. 740-742, Zurich, Switzerland: Trans Tech Publ., Jan. 2013, pp. 895-898.
7. S.-H. Ryu, C. Capell, C. Jonas, L. Cheng, M. O'Loughlin, A. Burk, A. Agarwal, J. Palmour, and A. Hefner, "Ultra high voltage (12 kV), high performance 4H-SiC IGBTs," in Proc. 24th Int. Symp. Power Semicond. Devices ICs, 2012, pp. 257-260.
8. S. G. Sundaresan, C. Sturdevant, M. Marripelly, E. Lieser, and R. Singh, "12.9 kV SiC PiN diodes with low on-state drops and high carrier lifetimes," in Materials Science Forum, vol. 717-720, Zurich, Switzerland: Trans Tech Publ., May 2012, pp. 949-952.
9. K. Takao, K. Wada, K. Sung, Y. Mastuoka, Y. Tanaka, S. Nishizawa, C. Ota, T. Kanai, T. Shinohe, and H. Ohashi, "4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters," in Proc. IEEE Energy Convers. Congr. Expo., Sep. 2012, pp. 1509-1514.
10. A. Tanaka, S. Ogata, T. Izumi, K. Nakayama, T. Hayashi, Y. Miyanagi, and K. Asano, "Reliability investigation of SiC bipolar device module in long time inverter operation," in Proc. 24th Int. Symp. Power Semicond. Devices ICs, 2012, pp. 233-236.
11. A. Elasser, M. Agamy, J. Nasadoski, A. Bolotnikov, Z. Stum, R. Raju, L. Stevanovic, J. Mari, M. Menzel, B. Bastien, and P. Losee, "Static and dynamic characterization of 6.5kV, 100A SiC bipolar PiN diode modules," in Proc. IEEE Energy Convers. Congr. Expo., Sep. 2012, pp. 3595-3602.
12. M. K. Das, C. Capell, D. E. Grider, R. Raju, M. Schutten, J. Nasadoski, S. Leslie, J. Ostop, and A. Hefner, "10 kV, 120 A SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications," in Proc. IEEE Energy Convers. Congr. Expo., Sep. 2011, pp. 2689-2692.
13. Y. Sugawara, S. Ogata, S. Okada, T. Izumi, Y. Miyanagi, K. Asano, K. Nakayama, and A. Tanaka, "4.5 kV 1000 A class SiC pn diode modules with resin mold package and ceramic flat package," in Proc. 20th Int. Symp. Power Semicond. Devices ICs, May 2008, pp. 267-270.
14. F. Filsecker, R. Alvarez, and S. Bernet, "Characterization of a new 6.5 kV 1000A SiC diode for medium voltage converters," in IEEE Energy Convers. Congr. Expo., Raleigh, NC, USA, Sep. 2012, pp. 2253-2260.
15. F. Filsecker, R. Alvarez, and S. Bernet, "Comparison of 6.5 kV silicon and SiC diodes," in IEEE Energy Convers. Cong. Expo., Raleigh, NC, USA, Sep. 2012, pp. 2261-2267.
16. D. Peters, W. Bartsch, B. Thomas, and R. Sommer, "6.5 kV SiC PiN diodes with improved forward characteristics," in Materials Science Forum, vol. 645-648, Zurich, Switzerland: Trans Tech Publ., Apr. 2010, pp. 901-904.
17. D. Peters, B. Thomas, T. Duetemeyer, T. Hunger, and R. Sommer, "An experimental study of high voltage SiC PiN diode modules designed for 6.5 kV/1 kA," in Materials Science Forum, vol. 679-680, Zurich, Switzerland: Trans Tech Publ., Mar. 2011, pp. 531-534.
18. R. Singh, "Reliability and performance limitations in SiC power devices," Microelectron. Reliabil., vol. 46, no. 5-6, pp. 713-730, 2006.
19. N. Kondrath and M. Kazimierczuk, "Characteristics and applications of silicon carbide power devices in power electronics," Int. J. Electron. Telecommun., vol. 56, no. 3, pp. 231-236, Jan. 2010.
20. J.-H. Fabian, S. Hartmann, and A. Hamidi, "Analysis of insulation failure modes in high power IGBT modules," in Proc.IEEE Ind. Appl. Conf., 40th IAS Annu. Meet. Conf. Record, Oct. 2005, vol. 2, pp. 799-805. (Pubitemid 44042540)
21. R. Wang, D. Boroyevich, P. Ning, Z. Wang, F. Wang, P. Mattavelli, K. D. T. Ngo, and K. Rajashekara, "A high-temperature SiC three-phase AC-DC converter design for 100C ambient temperature," IEEE Trans. Power Electron., vol. 28, no. 1, pp. 555-572, Jan. 2013.
22. K. Dohnke, W. Bartsch, R. Scḧorner, and T. Van Weelden, "A molded package optimized for high voltage SiC-devices," in Materials Science Forum, vol. 679-680, Zurich, Switzerland: Trans Tech Publ., Mar. 2011, pp. 762-765.
23. I. Josifovic, J. Popovic-Gerber, and J. Ferreira, "Improving SiC JFET switching behavior under influence of circuit parasitics," IEEE Trans. Power Electron., vol. 27, no. 8, pp. 3843-3854, Aug. 2012.
24. F. Filsecker, R. Alvarez, and S. Bernet, "Investigation of oscillations in a 6.5-kV, 1-kA SiC diode module," in Proc. 15th Eur. Conf. Power Electron. Appl., 2013, 9 pp.
25. M. Rahimo and N. Shammas, "Freewheeling diode reverse-recovery failure modes in IGBT applications," IEEE Trans. Ind. Appl., vol. 37, no. 2, pp. 661-670, Mar./Apr. 2001. (Pubitemid 32407303)
26. M. Schweizer, T. Friedli, and J. Kolar, "Comparison and implementation of a 3-level NPC voltage link back-to-back converter with SiC and Si diodes," in Proc. IEEE Appl. Power Electron. Conf. Expo., Feb. 2010, pp. 1527-1533.
27. T. Br̈uckner and D. G. Holmes, "Optimal pulse-width modulation for three-level inverters," IEEE Trans. Power Electron., vol. 20, no. 1, pp. 82-89, Jan. 2005. (Pubitemid 40154847)
28. T. Br̈uckner and S. Bernet, "Loss balancing in three-level voltage source inverters applying active NPC switches," in Proc. IEEE Power Electron. Spec. Conf., 2001, vol. 2, pp. 1135-1140. (Pubitemid 32950380)