Reliability of SiC power devices and its influence on their commercialization - Review, status, and remaining issues

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2010, Pages 156-161

  Treu, Michael ^a   Rupp, Roland ^b   Sölkner, Gerald ^b  

^a INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Bipolar degradation; Gate oxide integrity; MOS; Packaging; Schottky diode; Silicon carbide

Indexed keywords

BIPOLAR DEGRADATION; BIPOLAR DEVICE; GATE OXIDE INTEGRITY; JUNCTION FIELD EFFECTS; METAL OXIDE SEMICONDUCTOR; MOS; POWER DEVICES; SCHOTTKY DIODES; SILICON-CARBIDE POWER DEVICES;

BIPOLAR SEMICONDUCTOR DEVICES; DEGRADATION; ELECTRIC EQUIPMENT; FIELD EFFECT SEMICONDUCTOR DEVICES; GATES (TRANSISTOR); METALLIC COMPOUNDS; MOS DEVICES; RELIABILITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77957906823     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2010.5488834     Document Type: Conference Paper

References (32)

1. http://www.pwrx.com/TechnicalDocument.aspx?id=966
2. Paper ISCRM 2010 status crystal defecte
3. J.P. Bergmann, H. Lendenmann, P.A. Nilsson, and P. Skytt, "Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes", Mat. Sci. For., vols 353-356, pp.299-302, 2001
4. H. Lendenmann, F. Dahlquist, J.P. Bergmann, H. Bleichner and C. Hallin, "High-power SiC Diodes: characteristics, reliability and relation to metarial defects", Mat. Sci. For., vols 389-393, pp. 1259-1264, 2002
5. H. Lendenmann, J.P. Bergmann, F. Dahlquist, and C. Hallin, "Degradation in SiC bipolar devices: source and consequence of electrically active dislocations in SiC", Mat. Sci. For., vols 433-436, pp.901-906, 2003
6. M. Skowronski, J.Q. Liu, W.M. Vetter, M. Dudley, C. Hallin, and H. Lendenmann, "Recombination-enhanced defect motion in forward-biased 4H-SiC pn diodes" J. Appl. Phys., vol. 92, no. 8, pp. 4699-4704, 2002
7. R.E. Stahlbush, M.E. Twigg, J.J. Sumakeris, K.G. Irvine, and P.A. Losec, "Mechanisms of stacking fault growth in SiC pin diodes", Mat. Res. Soc. Symp. Proc., vol. 815, pp. 103-113, 2004
8. S. Ha, P. Mieszkowski, M. Skowronsky, and L. Rowland, "Dislocation conversion in 4H silicon carbide epitaxy", J. Cryst. Growth, vol. 244, no. 3-4., pp. 257-266, 2002
9. f drift in SiC bipolar power devices", Mat. Scie. For., vols. 527-529, pp. 141-146, 2006
10. M.K. Das, J.J. Sumakeris, B.A. Hull, and J. Richmond, "Evolution of drift-free, high power 4H-SiC PiN diodes", Mat. Scie. For., vols. 527-529, pp. 1329-1334, 2006
11. B. Kallinger, B. Thomas, and J. Friedrich, "Influence of substrate preparation and epitaxial growth paramters on the dislocation densities in 4H-SiC epitaxial layers", Mat. Scie. For., vols. 600-603, pp. 143-146, 2009
12. A. Agarwal, S. Krishnaswami, J. Richmond, C. Capell, S.-H. Rye, J. Palmour, B. Geil, D. Katsis, C. Scoozie, and R. Stahlbush, "Influence of basal plane dislocation induced stacking faults on the current gain in SiC BJTs", Mat. Sci. For., vols. 527-529, p.1409-1412, 2006
13. M. Domenji, C. Zaring, A.O. Konstantinov, M. Nawaz, J.-O. Svedberg, K. Gumaelius, I. Keri, A. Lindgren, B. Hammarlund, M. Östling, M. Reimark, "2.2 kV SiC BJTs with low VCESAT, fast swicthing and short-circuit capabiliy", Mat. Scie. For., vols. 645-648, pp. 1033-1036, to be published
14. R. Rupp, M. Treu, P. Türkes, H. Beermann, T. Scherg, H. Preis, and H. Cerva, "Influence of overgrown micropipes in the active area of SiC Schottky diodes on long term reliability", Mat. Sci. For., vols. 483-485, p. 925-8, 2004
15. M. Treu, R. Rupp, C.S. Tai, P. Blaschitz, J. Hilsenbeck, H. Brunner, D. Peters, R. Elpelt, and T. Reinmann, "A surge current stable and avalanche rugged SiC merged pn Schottky diode blocking 600V especially suited for PFC applications", Mat. Scie. For., vols. 527-529, pp. 1155-1158, 2006
16. th Int. Symp. Power Sem. Dev. IC's, pp. 245-248, 2008
17. P. Brosselard, N. Camara, X. Jordà, M. Vellvehi, E. Bano, J. Millan, and P. Godignon, "Reliability aspects of high voltage 4H-SiC JBS doides", Mat. Scie. For., vols. 600-603, pp. 935-603, 2007
18. M. Holz, J. Hilsenbeck, and R. Rupp, "Reliability aspects of SiC Schottky diodes", Phys. Stat. Solidi, vol. 206, no. 10, pp. 2295-2307, 2009
19. R. Stief, "Dotierung von 4H-SiC durch Ionenimplantation", Erlanger Berichte Mikroelektronik, Band 2000,1, Shaker Verlag, 2000
20. Private communication R. Schörner
21. M. Treu, E.P Burte, R. Schörner, P. Friedrichs, and H. Ryssel, "Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4H-silicon carbide", J. Appl. Phys., vol. 84, no. 5, pp. 2943-2948, 1998
22. M. Treu, R. Schörner, P. Friedrichs, R. Rupp, A. Wiedenhofer, D. Stephani, and H. Ryssel, "Reliability and degradation of metal-oxide-semiconductors on 4H-and 6H-silicon carbide", Mat. Scie. For., vols. 338-342, pp. 1089-1092, 1999
23. P. Tanner, S. Dimitrijev, H.F. Li, D. Sweatman, K.E. Prince, and H.B. Harrison, "SIMS analysis of nitrided oxides grown on 4H-SiC", J. Electr. Mat., vol. 28, no.2, pp. 109-111, 1999
24. 2/SiC interfaces ba X-ray photoelectron spectroscopy", J. Appl. Phys., vol. 86, no8, pp 4316-4321, 1999
25. M.K. Das, B.A. Hull, S. Krishnaswami, F. Husna, S. Haney, A. LElis, C.J. Scozzie, and J.D. Scofield, "Improved 4H-SiC MOS Interfaces produced via two independent processes: metal enhanced oxidation and 1300°C NO Anneal", Mat. Scie. For., vols. 527-529, pp. 967-970, 2006
26. 2O annealing", Mat. Scie. For., vols. 527-529, pp. 987-900, 2006
27. nd Ind. Appl. Conf., pp. 324-330, 2007
28. M. Grieb, M. Noborio, D. Peters, A.J. Bauer, P. Friedrichs, T. Kimoto, and H. Ryssel, "Comparison of the threshold-voltage stability of SiC MOSFETs with thermally grown and deposited gate oxides", Mat. Scie. For., vols. 645-648, pp. 681-684, to be published
29. T. Nakamura, "SiC Schoky diodes and MOSFETs for automotive applications", Mat. Scie. For., vols. 645-648, to be published
30. J.F. Ziegler, "Terrestral cosmic ray intensities", IBM J. Res. Dev., vol. 42, no.1, pp. 117-139, 1998
31. th Int. Symp. Power Semic. Dev. ICs, Davos, pp. 9-12, 1994
32. G. Sölkner, W. Kaindl, M. Treu, and D. Peters, "Reliability of SiC power devices against cosmic radiatio-induced failure", Mat. Scie. For., vols. 556-557, pp. 851-856, 2007