4.5 kV 1000 A class SiC pn diode modules with resin mold package and ceramic flat package

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2008, Pages 267-270

  Sugawara, Y ^a   Ogata, S ^a   Okada, S ^a   Izumi, T ^a   Miyanagi, Y ^a   Asano, K ^a   Nakayama, K ^a   Tanaka, A ^a  

^a KANSAI ELECTRIC POWER CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABS RESINS; CERAMIC MATERIALS; DIODES; ELECTRIC CONDUCTIVITY; MOLDS; POWER ELECTRONICS; RESINS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON; SILICON CARBIDE;

P-N DIODES; POWER SEMICONDUCTOR DEVICES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 51549090180     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2008.4538950     Document Type: Conference Paper

References (5)

1. Y.Sugawara.et al.: Proc. of ISPSD'07 (Jeju), p.273 (2007)
2. Y.Sugawara.et al.: Proc. of ICSCRM'07 (Otsu), We-3B-6 (2007)
3. H.Lendenmann et al.: Proc. of ISPSD (Osaka), p.31 (2001).
4. Y.Sugawara et al. : Proc. of ISPSD'02 (Santa Fe), p.245 (2002)
5. Y.Sugawara et al.: Proc. of ISPSD'06 (Naples), p.117 (2006)