An experimental study of high voltage SiC PiN diode modules designed for 6.5 kV / 1 kA

Materials Science Forum

Volumn 679-680, Issue , 2011, Pages 531-534

  Peters, Dethard ^a   Thomas, Bernd ^a   Duetemeyer, T ^b   Hunger, T ^b   Sommer, R ^c  

^a SiCED Electronics Development GmbH and Co KG   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c SIEMENS AG   (Germany)

Author keywords

Bipolar device; High power SiC diode module; High voltage; Medium voltage industrial inverter; PiN diode; Reverse recovery charge

Indexed keywords

ALUMINUM NITRIDE; DIODES; III-V SEMICONDUCTORS; SILICON CARBIDE;

BIPOLAR DEVICE; HIGH VOLTAGE; MEDIUM VOLTAGE; PIN DIODE; REVERSE RECOVERY CHARGE; SIC DIODES;

POWER SEMICONDUCTOR DIODES;

EID: 79955122070     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.679-680.531     Document Type: Conference Paper

References (5)

1. M. Hiller, R. Sommer and M. Beuermann: "Converter topologies and power semiconductors for industrial medium voltage converters", IAS 2008, 5-9 Oct. 2008, ISBN: 978-1-4244-2278-4.
2. http://www.automation.siemens.com/mcms/large-drives/en/converters/ medium-voltageconverters/sinamics-gm150/Pages/sinamics-gm150.aspx
3. T. Kanai et al., Proc. International Power Electronics Conference IPEC, 2010, p. 3259-3265.
4. D. Peters, W. Bartsch, B. Thomas and R. Sommer, Mat. Sc. For. Vols. 645-648 (2010) pp 901-904.
5. http://www.infineon.com, search for product "DD600S65K1".