10 kV, 120 a SiC half H-bridge power MOSFET modules suitable for high frequency, medium voltage applications

IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings

Volumn , Issue , 2011, Pages 2689-2692

  Das, Mrinal K ^a   Capell, Craig ^a   Grider, David E ^a   Leslie, Scott ^b   Ostop, John ^b   Raju, Ravi ^c   Schutten, Michael ^c   Nasadoski, Jeffrey ^c   Hefner, Allen ^d  

^a Arkansas Power Electronics International Inc   (United States)

^b POWEREX INC   (United States)

^c GE GLOBAL RESEARCH   (United States)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT HANDLING CAPABILITY; H-BRIDGES; HIGH FREQUENCY; MAJORITY CARRIERS; MEDIUM VOLTAGE; MOSFETS; POWER MODULE; POWER MOSFET; POWER SEMICONDUCTOR DEVICES; POWER SUBSTATIONS; SCHOTTKY DIODES; STATE OF THE ART; STATIC AND DYNAMIC;

ENERGY CONVERSION; MOSFET DEVICES; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SILICON CARBIDE; SOFT SWITCHING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 81855206598     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2011.6064129     Document Type: Conference Paper

References (3)

1. th Annual ISPSD Conference, Orlando, FL, pp. 253-255, 2008.
2. B.A. Hull, J. Sumakeris, M. O'Loughlin, Q. Zhang, J. Richmond, A. Powell, E. Imhoff, K. Hobart, A. Rivera-Lopez, and A. Hefner, "Performance and stability of large-area 4H-SiC 10-kV junction barrier Schottky rectifiers," IEEE Trans. Electron. Dev., vol. 55, no. 8, pp. 1864-1870, August 2008.
3. A.K. Agarwal, F. Husna, S. Haney, S.-H. Ryu, "A new degradation mechanism in high-voltage SiC power MOSFETs," IEEE Electron Dev. Lett., vol. 28, no. 7, pp. 587-589, July 2007. (Pubitemid 47044727)