4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters

2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012

Volumn , Issue , 2012, Pages 1509-1514

  Takao, Kazuto ^a   Wada, Keiji ^b   Sung, Kyungmin ^c   Mastuoka, Yuji ^d   Tanaka, Yasunori ^e   Nishizawa, Shinichi ^e   Ota, Chiharu ^a   Kanai, Takeo ^d   Shinohe, Takashi ^a   Ohashi, Hiromichi ^b  

^a TOSHIBA CORPORATION   (Japan)

^b TOKYO METROPOLITAN UNIVERSITY   (Japan)

^c IBARAKI NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^d TOSHIBA MITSUBISHI ELECTRIC INDUSTRIAL SYSTEMS CORPORATION   (Japan)

^e NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIODE PAIRS; GATE DRIVING; GATE RESISTORS; HIGH POWER CONVERTERS; HIGH-FREQUENCY SWITCHING; MEDIUM VOLTAGE; REVERSE RECOVERY; SWITCHING CHARACTERISTICS; SWITCHING LOSS; TURN-OFF LOSS; VOLTAGE RANGES;

ENERGY CONVERSION; EXHIBITIONS; POWER CONVERTERS; SEMICONDUCTOR DIODES; SILICON CARBIDE; SWITCHING;

SILICON;

EID: 84870939376     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2012.6342635     Document Type: Conference Paper

References (14)

1. K. Kunomura, M. Onishi, M. Kai, N. Iio, and N. Nakajima, "Electronic Frequency Converter Feeding SinglepPhase Circuit for Shinkansen," in Proc. Int. Power Electronics Conf.-ECCE ASIA-(IPEC-Sapporo 2010), 2010, pp.3136-3143
2. R. Jakob, C. Keller, G. Mohlenkamp, and B. Gollentz, "3-Level High Power Converter with Press Pack IGBT," in Proc. CD-ROM, 12th European Conference on Power Electronics and Applications (EPE 2007), Aalborg, Denmark, September, 2007.
3. K. Sung, K. Suzuki, Y. Tanaka, T. Ogura, and H. Ohashi, "A Study on Switching Frequency Limitation of High Voltage Power Converters in Combination of Si-IEGT and SiC-PiN Diode," in IEEE 2006 Applied Power Electronics Conference, 2006, pp. 455-459.
4. W. Bartsch, S. Gediga, H. Koehler, R. Sommer and G. Zaiser "Comparison of Si-and SiC-Powerdiodes in 100A-Modules," in Proc. CD-ROM, 12th European Conference on Power Electronics and Applications (EPE 2007), Aalborg, Denmark, September, 2007.
5. T. Kinjo, K. Takao, K. Sung, Y. Tanaka, T. Ogura and H. Ohashi, "Exact Power Loss Estimation Method for High Voltage Power Converters with 5 kV SiC-PiN Diode," in IEEE 2008 Applied Power Electronics Conference, 2008, pp. 1247-1251.
6. D. Peters, B. Thomas, T. Duetemeyer, T. Hunger, and R. Sommer, "An Experimental Study of High Voltage SiC PiN Diode Modules designed for 6.5 kV/1 kA," Materials Science Forum, Vols. 679-680, pp.531-534, 2011
7. Hesam Mirzaee, Ankan De, Awneesh Tripathi, and Subhashish Bhattacharya "Design Comparison of High Power Medium-Voltage Converters based on 6.5kV Si-IGBT/Si-PiN diode, 6.5kV Si-IGBT/SiC-JBS diode, and 10kV SiC MOSFET/SiC-JBS diode, " in IEEE 2011 Energy Conversion Congress & Expo (ECCE 2011), 2011, pp.2421-2428, 2011.
8. K. Sung, H. Akiyama, K. Takao, T. Kanai, Y. Tanaka, and H. Ohashi, " Switching Characteristic of Si-IEGTs and SiC-PiN Diodes Pair Connected in Series," in Proc. Int. Power Electronics Conf.-ECCE ASIA-(IPEC-Sapporo 2010), 2010, pp.170-175
9. K. Takao, Y. Tanaka, K. Sung, K. Wada, T. Shinohe, T. Kanai and H. Ohashi, "High-Frequency Switching High-Power Converter with SiC-PiN Diodes and Si-IEGTs, " in IEEE 2010 Energy Conversion Congress & Expo (ECCE 2010), 2010, pp.4558-4563, 2010.
10. Y. Tanaka, K. Takao, K. Sung, K. Wada, T. Kanai and H. Ohashi, "Development of 6kV-class SiC-PiN diodes for high-voltage power inverter," in International Symposium on Power Semiconductor Devices and ICs, 2010, pp. 213-216.
11. H. Lendenmann, F. Dahlquist, N. Johansson, R. Söderholm, P. A. Nilsson, J. P. Bergman and P. Skytt, " Long Term Operation of 4.5 kV PiN and 2.5 kV JBS Diodes, " Materials Science Forum, vols. 353-356, pp.727-730, 2001.
12. B. A. Hull, M. K. Das, J. T. Richmond, J. J. Sumakeris, R. Leonard, J. W. Palmour, and S. Leslie, "A 180 Amp/4.5 kV 4H-SiC PiN diode for High Current Power Modules, " Proceedings of the 18th International Symposium on Power Semiconductor Devices & IC's, pp. 277-280, 2006.
13. Y. Tanaka, S. Nishizawa, K. Fukuda, K. Arai, T. Ohno, N. Oyanagi, T. Suzuki, and T. Yatsuo, "Fabrication of 1.4-kV mesa-type p+-n diodes with avalanche breakdown and without forward degradation on high-quality 6H-SiC substrate, " Applied Physics Letters, vol. 83, pp.377-379, 2003.
14. K. Wada, J. Koyama, K. Takao, T. Kanai, and H. Ohashi, " Thermal analysis for Hybrid Piar Module of Si-IEGT and SiC-PiN Diode," in Proc. Int. Power Electronics Conf.-ECCE ASIA-(IPEC-Sapporo 2010), 2010, pp.2135-2140