Investigation of oscillations in a 6.5-kV, 1-kA SiC diode module

2013 15th European Conference on Power Electronics and Applications, EPE 2013

Volumn , Issue , 2013, Pages

  Filsecker, Felipe ^a   Wettengel, Stefan ^a   Alvarez, Rodrigo ^a   Bernet, Steffen ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Diode; Noise; Silicon Carbide (SiC); Simulation

Indexed keywords

BEHAVIORAL MODEL; DEVICE CHARACTERIZATION; HIGH FREQUENCY OSCILLATIONS; NOISE; SI-BASED DEVICES; SILICON CARBIDES (SIC); SIMULATION; SNUBBER CIRCUIT;

DIODES; POWER ELECTRONICS; SEMICONDUCTOR DIODES; SILICON;

SILICON CARBIDE;

EID: 84890175249     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPE.2013.6634484     Document Type: Conference Paper

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