16 kV, 1 cm2, 4H-SiC PiN diodes for advanced high-power and high-temperature applications

Materials Science Forum

Volumn 740-742, Issue , 2013, Pages 895-898

  Cheng, Lin ^a   Agarwal, Anant K ^a   O'Loughlin, Michael ^a   Capell, Craig ^a   Lam, Khiem ^a   Jonas, Charlotte ^a   Richmond, Jim ^a   Burk, Al ^a   Palmour, John W ^a   Ogunniyi, Aderinto A ^b   O'Brien, Heather K ^b   Scozzie, Charles J ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Carrier lifetime; High injection current density; High temperature; High voltage; PiN diode; Silicon carbide

Indexed keywords

CARRIER LIFETIME; CURRENT DENSITY; DIODES; ELECTRODES; HIGH TEMPERATURE APPLICATIONS; NITROGEN COMPOUNDS; SILICON CARBIDE; TEMPERATURE;

CONDUCTIVITY MODULATION; FORWARD VOLTAGE DROPS; HIGH INJECTION; HIGH TEMPERATURE; HIGH VOLTAGE; INJECTION CURRENT DENSITY; PIN DIODE; TEMPERATURE COEFFICIENT;

POWER SEMICONDUCTOR DIODES;

EID: 84874047146     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.740-742.895     Document Type: Conference Paper

References (3)

1. Y. Sugawara et al., Proceedings of 2001 International Symposium on Power Semiconductor Devices & ICs (ISPSD), Osaka, Japan, June 4-7, 2001.
2. T. Kimoto et al., J. Appl. Phys., 108, 083721 (2010).
3. L. Cheng et al., Proceedings of International Conference on High Temperature Electronics (HiTEC 2012), Albuquerque, NM, USA, May 8-10, 2012.