SCOPUS 정보 검색 플랫폼

IEEE Transactions on Industry Applications

Volumn 37, Issue 2, 2001, Pages 661-670

Freewheeling diode reverse-recovery failure modes in IGBT applications

(2) Rahimo, Munaf T a,b Shammas, Noel Y A c

a IEEE (Switzerland)

b ABB SWITZERLAND LTD (Switzerland)

c STAFFORDSHIRE UNIVERSITY (United Kingdom)

Author keywords

Dynamic avalanche; Freewheeling diode; Snappy recovery

Indexed keywords

DYNAMIC AVALANCHE; FREEWHEELING DIODES; REVERSE RECOVERY; SNAPPY RECOVERY;

CAPACITANCE; CARRIER CONCENTRATION; CHOPPERS (CIRCUITS); COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC WAVEFORMS; FAILURE ANALYSIS; INSULATED GATE BIPOLAR TRANSISTORS; POWER ELECTRONICS;

AVALANCHE DIODES;

EID: 0035272707 PISSN: 00939994 EISSN: None Source Type: Journal
DOI: 10.1109/28.913734 Document Type: Article

Times cited : (118)

References (9)

1
- 3843082387
- Effects of temperature, forward current and commutating di/dt on the reverse recovery behavior of fast power diodes
- Proc. EPE'95, Seville, Spain, Sept. 1995
- Rahimo, M.T.¹ Hoban, P.T.² Shammas, N.Y.A.³

2
- 0027831153
- Design considerations for fast soft reverse recovery diodes
- Proc. EPE'93, Brighton, U.K., 1993 , pp. 288-292
- Benda, V.¹

3
- 84936896634
- Reverse recovery processes in silicon power rectifiers
- Aug.
- (1967) IEEE Trans. Electron Devices , vol.55 , pp. 1331-1354
- Benda¹ Spenke²

4
- 1642264955
- Optimization of the reverse recovery behavior of fast power diodes using injection efficiency techniques and lifetime control techniques
- Proc. EPE'97, Trondheim, Norway, Sept. 1997
- Rahimo, M.T.¹ Shammas, N.Y.A.²

5
- 0006494640
- Advantages of the new controlled axial lifetime diode
- Proc. PCIM'94, Nuremburg, Germany, June 1994 , pp. 163-169
- Lutz, J.¹ Scheuermann, U.²

6
- 0005074533
- Study on voltage oscillation phenomenon in high voltage pin diode
- Proc. IPSPD'98, Kyoto, Japan, June 1998 , pp. 305-308
- Nemoto, M.¹ Takahashi, Y.² Fujii, T.³ Iwamuro, N.⁴ Seki, Y.⁵

7
- 0012409475
- An improved design for ultra soft-fast recovery diodes suitable for (600-1200 V) IGBT applications
- Proc. PCIM'98, Nuremburg, Germany, May 1998 , pp. 409-417
- Rahimo, M.T.¹ Findlay, W.J.² Coulbeck, L.³

8
- 0030109990
- Experimental and numerical analysis of GTO's snubberless turn-off operations
- (1996) Microelectron. J. , vol.27 , Issue.2-3 , pp. 231-241
- Khatir, Z.¹ Larguier, P.² Sebille, D.³

9
- 85070844755
- 4.5 kV GTO turn-off failure analysis under inductive load snubber, gate circuit and various parameters
- Proc. ISPSD'92, Tokyo, Japan, 1992 , pp. 112-117
- Omira, I.¹ Nakagawa, A.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.