Characteristics and applications of silicon carbide power devices in power electronics

International Journal of Electronics and Telecommunications

Volumn 56, Issue 3, 2010, Pages 231-236

  Kondrath, Nisha ^a   Kazimierczuk, Marian ^b  

^a UNIVERSITY OF MINNESOTA DULUTH   (United States)

^b Wright State University   (United States)

Author keywords

high frequency applications; high temperature; high temperature electronics; high voltage; SiC properties; Silicon carbide (SiC); wide energy band gap semiconductors

Indexed keywords

ENERGY GAP; HIGH TEMPERATURE APPLICATIONS; SILICON; SILICON CARBIDE; THERMAL CONDUCTIVITY; WIDE BAND GAP SEMICONDUCTORS;

ENERGY BANDGAPS; HIGH TEMPERATURE; HIGH VOLTAGE; HIGH-FREQUENCY APPLICATIONS; HIGH-TEMPERATURE ELECTRONICS; SIC PROPERTIES; SILICON CARBIDES (SIC);

POWER SEMICONDUCTOR DEVICES;

EID: 79954574166     PISSN: 20818491     EISSN: None     Source Type: Journal    
DOI: 10.2478/v10177-010-0030-3     Document Type: Article

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