5 kV SiC PiN diodes with improved forward characteristics

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 901-904

  Peters, D ^a   Bartsch, W ^a   Thomas, B ^a   Sommer, R ^b  

^a SiCED Electronics Development GmbH and Co KG   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

Ambipolar lifetime; Bipolar device; Forward voltage drift stability; High voltage; Industrial inverter; PiN diode; Reverse recovery; Switching behavior

Indexed keywords

DIODES; HVDC POWER TRANSMISSION; NITROGEN COMPOUNDS; RECOVERY; SILICON CARBIDE;

AMBIPOLAR; BIPOLAR DEVICE; FORWARD VOLTAGE DRIFT STABILITIES; HIGH VOLTAGE; INDUSTRIAL INVERTER; PIN DIODE; REVERSE RECOVERY; SWITCHING BEHAVIORS;

POWER SEMICONDUCTOR DIODES;

EID: 77955463702     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.901     Document Type: Conference Paper

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