Improving SiC JFET switching behavior under influence of circuit parasitics

IEEE Transactions on Power Electronics

Volumn 27, Issue 8, 2012, Pages 3843-3854

  Josifović, Ivan ^a   Popović Gerber, Jelena ^a   Ferreira, Jan Abraham ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Capacitive coupling; parasitic oscillations; ringing dampening; silicon carbide (SiC) JFET

Indexed keywords

CAPACITIVE COUPLINGS; FERRITE BEADS; FERRITE COMPONENT; HEAT SPREADERS; INSULATED METAL SUBSTRATES; LOWER SWITCHING LOSS; MOTOR DRIVE; NORMALLY OFF; PARASITIC EFFECT; PARASITIC OSCILLATIONS; PARASITICS; RINGING DAMPENING; SIC DEVICES; SWITCHING BEHAVIORS; SWITCHING PERFORMANCE;

ELECTRIC DRIVES; FERRITE;

SILICON CARBIDE;

EID: 84860313217     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2012.2185951     Document Type: Article

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