Static and dynamic characterization of 6.5kV, 100A SiC Bipolar PiN Diode modules

2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012

Volumn , Issue , 2012, Pages 3595-3602

  Elasser, Ahmed ^a   Agamy, Mohammed ^a   Nasadoski, Jeffrey ^a   Bolotnikov, Alexander ^a   Stum, Zachary ^a   Raju, Ravi ^a   Stevanovic, Ljubisa ^a   Mari, Jorge ^b   Menzel, Matthias ^b   Bastien, Bertrand ^b   Losee, Peter ^c  

^a GE GLOBAL RESEARCH   (United States)

^b GE GLOBAL RESEARCH   (Germany)

^c SemiSouth Laboratories Inc   (United States)

Author keywords

Bipolar Degradation; Bipolar Diodes; Current Sharing; High Voltage; PiN; Silicon Carbide

Indexed keywords

ANTI-PARALLEL DIODES; BIPOLAR DIODES; CURRENT-SHARING; HIGH CURRENTS; HIGH VOLTAGE; HIGH-FREQUENCY APPLICATIONS; PIN; PIN DIODE; SIC SUBSTRATES; STATIC AND DYNAMIC; SWITCHING TESTS;

DIODES; ELECTRICITY; ENERGY CONVERSION; EXHIBITIONS; SEMICONDUCTOR DIODES;

SILICON CARBIDE;

EID: 84870950510     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2012.6342485     Document Type: Conference Paper

References (12)

1. N. Galster, H. Vetsch, M. Roth, E. Tsyplakov, and E. Carroll, "The Design, Application and Production-Testing of High-Power Fast Recovery Diodes," PCIM, Nurnberg, May 1998.
2. B.J. Baliga, "Trends in Power Semiconductor Devices," IEEE Transaction on Electron Devices, Vol. 43, No. 10, pp. 1717-1731, 1996.
3. http://www.cree.com/products/power-docs2.asp
4. H. Mirzaee, S. Bhattacharya, S.H. Ryu, and A. Agarwal, "Design Comparison of 6.5 kV Si-IGBT, 6.5kV SiC JBS Diode, and 10 kV SiC MOSFETs in Megawatt Converters for Shipboard Power System," IEEE Electric Ship Technology Symposium, pp. 248-253, 2011.
5. Y. Sugawara, D.Takayama, K. Asano, R. Singh, J. Palmour, and T. Hayashi, "12-19kV 4H-SIC pin Diodes with Low Power Loss," International Symposium on Power Semiconductor Devices and ICs, Osaka, pp. 27-30, 2001.
6. A. Bolotnikov, P. Losee, J. Nasadoski, J. Glaser, S. Arthur, Z. Stum, J. Garrett, A. Elasser, L. Stevanovic, H. Naik, and T.P. Chow, "Design, Yield and Process Capability Study of 8kV 4H-SiC PIN Diodes," International Conference on SiC and Related Materials, Cleveland, 2011.
7. N. Mohan, T. Undeland and W. Robbins, "Power Electronics: Converters, Applications and Design," John Wiley and Sons 1989.
8. J.P. Bergman, H. Jakobsson, L. Storasta, F.H.C. Carlsson, B. Magnusson, S. Sridhara, G. Pozina, H. Lendenmann, and E, Janzen, "Characterization and Defects in Silicon carbide," Proceedings of the International Confeence on Silicon Carbide and Related Materials, Vol. 389-3, pp. 9-14, 2001.
9. P. Brosselard, A. Perez. Tomas, N. Camara, J. hassan, X. Jorda, M. Vellvehi, P. Godignon, J. Millan, and J.P. Bergman, " The Effects of the Temperature on the Bipolar Degradation of 3.3kV 4H-SiC PiN diodes," Proceeding sof the 20yth International Symposium on Power Semiocndciutr Devices and ICs, pp. 237-240, 2008.
10. K.O. Dohnke, D. Peters, and R. Schoerner, " Charaterization of packaged 6.5kV SiC PiN-Diodes up to 300oC," Proceedings of the International Confeence on Silicon Carbide and Related Materials, pp. 867-870, 2011.
11. P.A. Ivanov, M.E. Levinshtein, M.S. Boltovets, V.A. Krivutsa, J. Palmour, M.K. Das, and B.A. Hull, "Electrical Characterization of High Volatge 4H-SiC PiN Diodes Fabricated Using a Low Basal Plane Dislocation Process," Materials Science Forum, Vols. 556-557, pp. 921-924, 2007.
12. T.E. Griffin, M. G. Koebke, "Design and Test Evaluation of SiC Diode Modules," Army Research Laboratory Report, ARL-TR-3222, May 2004.