A molded package optimized for high voltage SiC-devices

Materials Science Forum

Volumn 679-680, Issue , 2011, Pages 762-765

  Dohnke, Karl O ^a   Bartsch, Wolfgang ^a   Schoerner, Reinhold ^a   Van Weelden, T ^b  

^a SiCED Electronics Development GmbH and Co KG   (Germany)

^b Boschman Technologies BV   (Netherlands)

Author keywords

High voltage; Power cycling; SiC PIN diode; Transfer molded package

Indexed keywords

DIODES; ELECTRONIC EQUIPMENT TESTING; SILICON CARBIDE;

ELECTRICAL ISOLATION; ELECTRICAL MEASUREMENT; HIGH VOLTAGE; HIGH VOLTAGE APPLICATIONS; POWER CYCLING; SIC PIN DIODES; TEMPERATURE SWINGS; TRANSFER MOLDED PACKAGES;

POWER SEMICONDUCTOR DIODES;

EID: 79955085338     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.679-680.762     Document Type: Conference Paper

References (4)

1. see e.g. DIN VDE 010-01.89
2. Boschman Technologies, www.boschman.nl
3. W. Bartsch, H. Mitlehner, S. Gediga, Bipolar SiC-Diodes - Challenges arising from Physical and Technological Aspects Invited poster We-P3;Mat. Sci. For. Vols. 556-557 (2007)889-894
4. M. Held, P. Jacob, G. Nicoletti, P. Scacco, M. H. Poech, Fast Power Cycling Test for IGBT Modules in Traction Application, Proc. Power Electronics and Drive Systems 1997, 425-430