Comparison of 6.5 kV silicon and SiC diodes

2012 IEEE Energy Conversion Congress and Exposition, ECCE 2012

Volumn , Issue , 2012, Pages 2261-2267

  Filsecker, Felipe ^a   Alvarez, Rodrigo ^a   Bernet, Steffen ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

JUNCTION TEMPERATURES; LOW POWER APPLICATION; MEDIUM-VOLTAGE CONVERTER; PIN DIODE; SIC DIODES; STATIC BEHAVIORS; SWITCHING LOSS; TURN-ON TRANSIENTS; WAVE FORMS;

ENERGY CONVERSION; EXHIBITIONS; POWER ELECTRONICS; SEMICONDUCTOR DIODES; SILICON CARBIDE;

DIODES;

EID: 84870911213     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2012.6342433     Document Type: Conference Paper

References (21)

1. W.-T. Franke and F. Fuchs, "Comparison of switching and conducting performance of SiC-JFET and SiC-BJT with a state of the art IGBT," in Power Electronics and Applications, 2009. EPE '09. 13th European Conference on, Sept. 2009.
2. T. Kimoto, "SiC technologies for future energy electronics," in VLSI Technology (VLSIT), 2010 Symposium on, June 2010, pp. 9-14.
3. M. Ostling, R. Ghandi, and C. Zetterling, "SiC power devices: present status, applications and future perspective," in Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on, May 2011, pp. 10-15.
4. N. Kaminski, "State of the art and the future of wide band-gap devices," in Power Electronics and Applications, 2009. EPE '09. 13th European Conference on, Sept. 2009.
5. Hefner, A.R., R. Singh, J.-S. Lai, D. Berning, S. Bouche, and C. Chapuy, "SiC power diodes provide breakthrough performance for a wide range of applications," Power Electronics, IEEE Transactions on, vol. 16, no. 2, pp. 273-280, Mar. 2001.
6. R. Singh, "Reliability and performance limitations in SiC power de-vices," Microelectronics Reliability, vol. 46, no. 56, pp. 713-730, 2006.
7. P. Friedrichs, "SiC power devices for industrial applications," in Power Electronics Conference (IPEC), 2010 International, June 2010, pp. 3241-3248.
8. P. Neudeck, R. Okojie, and L.-Y. Chen, "High-temperature electronics-a role for wide bandgap semiconductors?" Proceedings of the IEEE, vol. 90, no. 6, pp. 1065-1076, jun 2002.
9. G. Miller, "New semiconductor technologies challenge package and system setups," in Integrated Power Electronics Systems (CIPS), 2010 6th International Conference on, March 2010.
10. W. Bartsch, R. Elpelt, R. Schoerner, K.-O. Dohnke, B. Bloecher, and K. Koerber, "Bipolar 6.5 kV-SiC-diodes: on the road to industrial application," in Power Electronics and Applications, 2005. EPE '05. 13th European Conference on, Sept. 2005.
11. D. Peters, W. Bartsch, B. Thomas, and R. Sommer, "6.5 kV SiC PiN diodes with improved forward characteristics," in Materials Science Forum, vol. 645. Trans Tech Publ, 2010, pp. 901-904.
12. D. Peters, B. Thomas, T. Duetemeyer, T. Hunger, and R. Sommer, "An experimental study of high voltage SiC PiN diode modules designed for 6.5kV / 1kA," in Materials Science Forum, vol. 679. Trans Tech Publ, 2011, pp. 531-534.
13. K. Dohnke, W. Bartsch, R. Schörner, and T. Van Weelden, "A molded package optimized for high voltage SiC-devices," in Materials Science Forum, vol. 679. Trans Tech Publ, 2011, pp. 762-765.
14. K. Dohnke, D. Peters, and R. Schörner, "Characterization of packaged 6.5 kv sic pin-diodes up to 300 c," in Materials Science Forum, vol. 717. Trans Tech Publ, 2012, pp. 957-960.
15. Y. Sugawara, S. Ogata, S. Okada, T. Izumi, Y. Miyanagi, K. Asano, K. Nakayama, and A. Tanaka, "4.5 kV 1000A class SiC pn diode modules with resin mold package and ceramic flat package," in Power Semiconductor Devices and ICs (ISPSD), 2008 IEEE 20th International Symposium on, May 2008, pp. 267-270.
16. K. Takao, Y. Tanaka, K. Sung, K. Wada, T. Shinohe, T. Kanai, and H. Ohashi, "High-power converters with high switching frequency oper-ation using SiC-PiN diodes and Si-IEGTs," in Electric Power Equipment-Switching Technology (ICEPE-ST), 2011 1st International Conference on, Oct. 2011, pp. 412-417.
17. Y. Tanaka, H. Ohashi, K. Sung, K. Takao, K. Wada, and T. Kanai, "Development of 6kV-class SiC-PiN diodes for high-voltage power inverter," in Power Semiconductor Devices and ICs (ISPSD), 2010 IEEE 22nd International Symposium on, June 2010, pp. 213-216.
18. N. Kondrath and M. Kazimierczuk, "Characteristics and applications of silicon carbide power devices in power electronics," International Journal of Electronics and Telecommunications, vol. 56, no. 3, pp. 231-236, 2010.
19. J.-H. Fabian, S. Hartmann, and A. Hamidi, "Analysis of insulation failure modes in high power igbt modules," in Industry Applications Conference, 2005. Fourtieth IAS Annual Meeting. Conference Record of the 2005, vol. 2, oct. 2005, pp. 799-805 Vol. 2.
20. R. Hermann, S. Bernet, Y. Suh, and P. Steimer, "Parallel connection of Integrated Gate Commutated Thyristors (IGCTs) and diodes," Power Electronics, IEEE Transactions on, vol. 24, no. 9, pp. 2159-2170, Sept. 2009.
21. J. Lutz, H. Schlangenotto, U. Scheuermann, and R. De Doncker, "Power device-induced oscillations and electromagnetic disturbances," in Semiconductor Power Devices. Springer Berlin Heidelberg, 2011, pp. 475-495.