12.9 kV SiC PiN diodes with low on-state drops and high carrier lifetimes

Materials Science Forum

Volumn 717-720, Issue , 2012, Pages 949-952

  Sundaresan, Siddarth ^a   Sturdevant, Charles ^a   Marripelly, Madhuri ^a   Lieser, Eric ^a   Singh, Ranbir ^a  

^a GENESIC SEMICONDUCTOR INC   (United States)

Author keywords

Breakdown voltage; High voltage; OCVD; On resistance; SiC PiN diode; Switching

Indexed keywords

DIODES; ELECTRIC BREAKDOWN; ELECTRIC RECTIFIERS; EPILAYERS; NITROGEN COMPOUNDS; OPEN CIRCUIT VOLTAGE; SILICON CARBIDE; SWITCHING;

AVALANCHE BREAKDOWN; FREEWHEELING DIODES; HIGH VOLTAGE; OCVD; ON-RESISTANCE; ON-STATE VOLTAGE DROP; OPEN CIRCUIT VOLTAGE DECAYS; SIC PIN DIODES;

POWER SEMICONDUCTOR DIODES;

EID: 84861359996     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.717-720.949     Document Type: Conference Paper

References (3)

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2. H. Matsuura et al. Journal of Applied Physics 96(5), 2708-2715 (2004).
3. T T Mnatsakanov et al. Semicond. Sci. Tech. 17, 974-977 (2002).