New semiconductor technologies challenge package and system setups

2010 6th International Conference on Integrated Power Electronics Systems, CIPS 2010

Volumn , Issue , 2011, Pages

  Miller, Gerhard ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ASSEMBLY TECHNOLOGY; CURRENT CAPABILITY; DEVELOPMENT TRENDS; HIGHER LOADS; INDUCTIVE INTERCONNECT; LOWER SWITCHING LOSS; NEW MATERIAL; OPERATING TEMPERATURE; POWER DENSITIES; POWER SEMICONDUCTORS; SEMICONDUCTOR TECHNOLOGY; SYSTEM-SETUP; TEMPERATURE CYCLING;

GALLIUM NITRIDE; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79953734725     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. T.Laska, G.Miller et al: Short Circuit Properties of Trench-/Field-Stop- IGBTs - Design Aspects for a Superior Robustness, IEDM'03, Cambridge; and internal communication.
2. th, 2009, Zürich, Switzerland.
3. B.J. Baliga: Power Semiconductor Devices, PWS Publishing Company, 1995, p. 373.
4. A. Schlögl, G. Deboy et.al.: Properties of the New Compensation Devices (CoolMOS) between 420K and 80K- the Ideal Device for Cryogenic Applications; ISPSD'99.
5. G. Miller: Panel discussion on future of power devices, ISPSD'05 - Santa Barbara, USA.
6. Nakagawa : Theoretical investigation of silicon limit characteristics of IGBT, ISPSD'06, Naples, s. 1-2.
7. R. Bayerer: Higher Junction Temperature in Power Modules - a demand from hybrid cars, a potential for the next step increase in power density for various Variable Speed Drives, PCIM'08 - Nuremberg.
8. F. Pfirsch: Idealer Leistungsschalter unter dem Aspekt beliebig verkleinerbarer Streuinduktivitäten; 35. Kolloquium Halbleiter-Leistungs- Bauelemente und ihre systemtechnische Anwendung, Freiburg Okt 2006.