Interfacial band alignment and structural properties of nanoscale TiO 2 thin films for integration with epitaxial crystallographic oriented germanium

Journal of Applied Physics

Volumn 115, Issue 2, 2014, Pages

  Jain, N ^a   Zhu, Y ^a   Maurya, D ^b   Varghese, R ^b   Priya, S ^b   Hudait, M K ^a  

^a Virginia Polytechnic Institute and State University   (United States)

^b VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE ASSESSMENT; COMPREHENSIVE ASSESSMENT; CRYSTALLOGRAPHIC ORIENTATIONS; DIELECTRIC INTEGRATION; METAL-INSULATOR-SEMICONDUCTOR CONTACTS; NANOSCALE TITANIUM DIOXIDE; PERFORMANCE ANALYSIS; SUBSTRATE ORIENTATION;

ALIGNMENT; CONDUCTION BANDS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GERMANIUM; MIS DEVICES; MOLECULAR BEAM EPITAXY; PHOTOELECTRONS; PHYSICAL VAPOR DEPOSITION; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

TITANIUM DIOXIDE;

EID: 84892379779     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4861137     Document Type: Article

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