Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100), (110), and (111)A GaAs substrates

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 31, Issue 1, 2013, Pages

  Hudait, Mantu K ^a   Zhu, Yan ^a   Jain, Nikhil ^a   Hunter, Jerry L ^b  

^a Virginia Polytechnic Institute and State University   (United States)

^b VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; GALLIUM ARSENIDE; GERMANIUM; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOELECTRONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND ALIGNMENTS; BAND OFFSETS; CRYSTALLOGRAPHIC ORIENTATIONS; EPITAXIAL GAAS; GAAS; GAAS SUBSTRATES; GAAS/GE; HIGH QUALITY; HIGH RESOLUTION; IN-BAND; INTERFACE QUALITY; RECONSTRUCTED SURFACES; VACUUM TRANSFER; VALENCE BAND OFFSETS; X RAY ROCKING CURVE; XPS DATA;

INTERFACES (MATERIALS);

EID: 84872739571     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4770070     Document Type: Article

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