Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer

Applied Physics Letters

Volumn 101, Issue 18, 2012, Pages

  Paramahans Manik, Prashanth ^a   Kesh Mishra, Ravi ^a   Pavan Kishore, V ^a   Ray, Prasenjit ^a   Nainani, Aneesh ^b   Huang, Yi Chiau ^b   Abraham, Mathew C ^b   Ganguly, Udayan ^a   Lodha, Saurabh ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; FERMI-LEVEL UNPINNING; INTERFACIAL LAYER; LOW RESISTANCE; LOW RESISTIVITY; N-DOPING; N-TYPE GE; POST METALLIZATION ANNEAL; REVERSE CURRENTS; SPECIFIC RESISTIVITIES; TUNNELING BARRIER; ZNO;

GERMANIUM; OHMIC CONTACTS;

ZINC OXIDE;

EID: 84868665185     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4764909     Document Type: Article

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