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Volumn 113, Issue 13, 2013, Pages

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND OFFSET; CROSS-SECTIONAL TEM; CRYSTALLOGRAPHIC ORIENTATIONS; FUTURE APPLICATIONS; TRANSMISSION MICROSCOPY; VALENCE BAND OFFSETS; X RAY MEASUREMENTS; XPS MEASUREMENTS;

EID: 84880386771     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4799367     Document Type: Conference Paper
Times cited : (37)

References (46)
  • 1
    • 84880685443 scopus 로고    scopus 로고
    • International Technology Roadmafor Semiconductors (ITRS), 2011 edition, Process Integration, Devices, and Structures (PIDS), Chapter.
    • International Technology Roadmap for Semiconductors (ITRS), 2011 edition, Process Integration, Devices, and Structures (PIDS), Chapter (2011).
    • (2011)
  • 5
    • 84866488540 scopus 로고    scopus 로고
    • 10.1149/1.3700922
    • M. K. Hudait, ECS Trans. 45, 581 (2012). 10.1149/1.3700922
    • (2012) ECS Trans. , vol.45 , pp. 581
    • Hudait, M.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.