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Journal of Applied Physics

Volumn 114, Issue 2, 2013, Pages

Quasi-zero lattice mismatch and band alignment of BaTiO3 on epitaxial (110)Ge

(6) Hudait, M K a Zhu, Y a Jain, N a Maurya, D b Zhou, Y b Priya, S b

a Virginia Polytechnic Institute and State University (United States)

b VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONFINEMENTS; CONDUCTION BAND OFFSET; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; HIGH RESOLUTION X RAY DIFFRACTION; LOW POWER APPLICATION; LOW POWER TRANSISTORS; METAL OXIDE SEMICONDUCTOR; VALENCE BAND OFFSETS;

ALIGNMENT; BARIUM COMPOUNDS; EPITAXIAL GROWTH; HETEROJUNCTIONS; LATTICE MISMATCH; MOLECULAR BEAM EPITAXY; PHOTOELECTRONS; POWER ELECTRONICS; PULSED LASER DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

GERMANIUM;

EID: 84880394141 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4813226 Document Type: Conference Paper

Times cited : (8)

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