High performance 60 nm gate length germanium p-MOSFETs with ni germanide metal source/drain

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 1041-1043

  Yamamoto, Toyoji ^a   Yamashita, Yoshimi ^a   Harada, Masatomi ^a   Taoka, Noriyuki ^a   Ikeda, Keiji ^a   Suzuki, Kunihiro ^a   Kiso, Osamu ^a   Sugiyama, Naoharu ^a   Takagi, Shin Ichi ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 50249121118     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419098     Document Type: Conference Paper

References (8)

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3. R. Li et al., EDL, 27 (2006), p. 476.
4. K. Ikeda et al., APL, 88 (2006), p. 152115.
5. B. De Jaeger et al., Microelectronic Eng., 80 (2005), p. 26.
6. S. Takagi et al., ED-41 (1994), p. 2357.
7. S. M. Sze, Physics of Semiconductor Devices, 2nd Edition (1981), Chapter 1, New York, Wiley
8. L. Clavelier et al., Silicon Nanoelectronics Workshop, (2005), p. 18.