The impact of X-ray and proton irradiation on HfO2/Hf-based bipolar resistive memories

IEEE Transactions on Nuclear Science

Volumn 60, Issue 6, 2013, Pages 4540-4546

  Bi, J S ^a,b   Han, Z S ^b   Zhang, E X ^a   McCurdy, M W ^a   Reed, R A ^a   Schrimpf, R D ^a   Fleetwood, D M ^a   Alles, M L ^a   Weller, R A ^a   Linten, D ^c   Jurczak, M ^c   Fantini, A ^c  

^a VANDERBILT UNIVERSITY   (United States)

^b INSTITUTE OF MICROELECTRONICS   (China)

^c IMEC   (Belgium)

Author keywords

Hafnium dioxide; nonvolatile memory; proton; rad hard; resistive switching; total ionizing dose; X ray

Indexed keywords

HAFNIUM; HAFNIUM OXIDES; PROTON IRRADIATION; PROTONS; X RAYS;

HAFNIUM DIOXIDE; NON-VOLATILE MEMORY; RAD HARD; RESISTIVE SWITCHING; TOTAL IONIZING DOSE;

RANDOM ACCESS STORAGE;

EID: 84891557440     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2013.2289369     Document Type: Article

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