Retention mechanism of Cu-doped SiO2-based resistive memory

Journal of Physics D: Applied Physics

Volumn 44, Issue 20, 2011, Pages

  Liu, Chih Yi ^a   Huang, Yung Hung ^a   Ho, Jen Yen ^a   Huang, Chun Chieh ^a  

^a NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING FILAMENT; CU DIFFUSION; CU ELECTRODE; DC VOLTAGE; DEVICE RESISTANCE; ELECTROCHEMICAL REACTIONS; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; PLASMA TREATMENT; RESISTIVE SWITCHING; RETENTION MECHANISM; RETENTION PROPERTIES; RETENTION TIME;

PLASMA APPLICATIONS; PLATINUM;

SILICON COMPOUNDS;

EID: 79955840609     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/20/205103     Document Type: Article

References (11)

1. Dong R and Lee D S 2007 Appl. Phys. Lett. 90 042107
2. Liu C Y, Lin X J, Wang H Y and Lai C H 2010 Japan. J. Appl. Phys. 49 056507
3. Liu C Y, Wu P H, Wang A, Jang W Y, Young J C, Chiu K Y and Tseng T Y 2005 IEEE Electron Device Lett. 26 351
4. Thermadam S P, Bhagat S K, Alford T L, Sakaguchi Y, Kozicki M N and Mitkova M 2010 Thin Solid Films 518 3293
5. Schindler C, Thermadam S C P and Waser R 2007 IEEE Trans. Electron Devices 54 2762
6. Balakrishnan M, Thermadam S C P, Mitkova M and Kozicki M N 2006 7th Annual Non-Volatile Memory Technical Symp. (San Mateo, CA) p 104
7. Rosezin R, Meier M, Breuer U, Kügeler C and Waser R 2011 IEEE Trans. Nanotechnol. 10 338
8. Kim K H, Jo S H, Gaba S and Lua W 2010 Appl. Phys. Lett. 96 053106
9. Schindler C, Staikov G and Waser R 2009 Appl. Phys. Lett. 94 072109
10. Yu S and Wong H-S P 2010 IEDM Technical Digest (San Francisco, CA) (IEEE) p 520
11. Yeh C F, Lee Y C, Chen C M and Wu K H 2000 Japan. J. Appl. Phys. 39 6672